No. |
Part Name |
Description |
Manufacturer |
241 |
MBM29DL323TE-12TR |
32M (4M x 8/2M x 16) BIT Dual Operation |
Fujitsu Microelectronics |
242 |
MBM29DL323TE-80PBT |
32M (4M x 8/2M x 16) BIT Dual Operation |
Fujitsu Microelectronics |
243 |
MBM29DL323TE-80TN |
32M (4M x 8/2M x 16) BIT Dual Operation |
Fujitsu Microelectronics |
244 |
MBM29DL323TE-80TR |
32M (4M x 8/2M x 16) BIT Dual Operation |
Fujitsu Microelectronics |
245 |
MBM29DL323TE-90PBT |
32M (4M x 8/2M x 16) BIT Dual Operation |
Fujitsu Microelectronics |
246 |
MBM29DL323TE-90TN |
32M (4M x 8/2M x 16) BIT Dual Operation |
Fujitsu Microelectronics |
247 |
MBM29DL323TE-90TR |
32M (4M x 8/2M x 16) BIT Dual Operation |
Fujitsu Microelectronics |
248 |
MBM29DL323TE12PBT |
Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation |
Fujitsu Microelectronics |
249 |
MBM29DL323TE12TN |
Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation |
Fujitsu Microelectronics |
250 |
MBM29DL323TE12TR |
Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation |
Fujitsu Microelectronics |
251 |
MBM29DL323TE80PBT |
Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation |
Fujitsu Microelectronics |
252 |
MBM29DL323TE80TN |
Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation |
Fujitsu Microelectronics |
253 |
MBM29DL323TE80TR |
Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation |
Fujitsu Microelectronics |
254 |
MBM29DL323TE90PBT |
Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation |
Fujitsu Microelectronics |
255 |
MBM29DL323TE90TN |
Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation |
Fujitsu Microelectronics |
256 |
MBM29DL323TE90TR |
Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation |
Fujitsu Microelectronics |
257 |
NX25F080A-3TE-R |
3 V, 8M-bit flash memory with 4-pin SPI interface |
NexFlash |
258 |
NX26F080A-3TE-R |
3 V, 8M-bit flash memory with 2-pin NXS interface |
NexFlash |
259 |
PDTA123TE |
PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open |
Nexperia |
260 |
PDTA123TE |
PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open |
NXP Semiconductors |
261 |
PDTA143TE |
PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open |
Nexperia |
262 |
PDTA143TE |
PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open |
NXP Semiconductors |
263 |
PDTA143TE |
PDTA143T series; PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open |
Philips |
264 |
PDTA143TEF |
R1 = 4.7 kOhm, R2 = open |
Philips |
265 |
PDTC123TE |
NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open |
Nexperia |
266 |
PDTC123TE |
NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open |
NXP Semiconductors |
267 |
PDTC143TE |
NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open |
Nexperia |
268 |
PDTC143TE |
NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open |
NXP Semiconductors |
269 |
PDTC143TE |
PDTC143T series; NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open |
Philips |
270 |
PDTC143TEF |
R1 = 4.7 kOhm, R2 = open |
Philips |
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