| No. |
Part Name |
Description |
Manufacturer |
| 241 |
1N805 |
40 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 242 |
1N910 |
40 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 243 |
1PS66SB62 |
40 V, 20 mA low C_d Schottky barrier diodes |
Philips |
| 244 |
1PS66SB62 |
1PS66SB62; 1PS76SB62; 40 V, 20 mA low C_d Schottky barrier diodes |
Philips |
| 245 |
1SMB2EZ140 |
140 V, 2 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 246 |
1SMB3EZ140 |
140 V, 3 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 247 |
1SMC5382 |
140 V, 5 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 248 |
1V150 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 240 V @ 1mA DC test current. |
NTE Electronics |
| 249 |
2EZ140 |
140 V, 2 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 250 |
2EZ140 |
140 V, 0.5 A, 2 W, glass passivated junction silicon zener diode |
TRSYS |
| 251 |
2N2222AHR |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 252 |
2N2222AHRG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 253 |
2N2222AHRT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 254 |
2N2222ARHRG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 255 |
2N2222ARHRT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 256 |
2N2222ARUBG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 257 |
2N2222ARUBT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 258 |
2N2222AUB1 |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 259 |
2N2222AUBG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 260 |
2N2222AUBT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 261 |
2N3442 |
10 AMPERE POWER TRANSISTOR NPN SILICON 140 VOLTS 117 WATTS |
Motorola |
| 262 |
2N3906 |
40 V, PNP small signal transistor |
TRANSYS Electronics Limited |
| 263 |
2N4398 |
-40 V, -30 A, 200 W, PNP silicon power transistor |
Texas Instruments |
| 264 |
2N4427 |
ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W |
SGS Thomson Microelectronics |
| 265 |
2N4898 |
Medium-power PNP silicon power transistor. 4 A, 40 V, 25 W. |
Motorola |
| 266 |
2N5301 |
40 V, 30 A, 200 W, NPN silicon power transistor |
Texas Instruments |
| 267 |
2N6383 |
10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 268 |
2N6386 |
10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
| 269 |
2N6648 |
10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 270 |
2N6666 |
10 A P-N-P darlington power transistor. -40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
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