| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2N6377 |
Trans GP BJT PNP 80V 50A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 242 |
2N6378 |
50A High-Power PNP silicon transistor 250W 100V |
Motorola |
| 243 |
2N6378 |
Trans GP BJT PNP 100V 50A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 244 |
2N6379 |
50A High-Power PNP silicon transistor 250W 120V |
Motorola |
| 245 |
2N6379 |
Trans GP BJT PNP 120V 50A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 246 |
2N6380 |
High-Power PNP silicon transistor 50A 250W 80V |
Motorola |
| 247 |
2N6380 |
Trans GP BJT PNP 80V 50A 3-Pin TO-63 |
New Jersey Semiconductor |
| 248 |
2N6381 |
High-Power PNP silicon transistor 50A 250W 100V |
Motorola |
| 249 |
2N6382 |
High-Power PNP silicon transistor 50A 250W 120V |
Motorola |
| 250 |
2N6389 |
Trans GP BJT PNP 80V 50A 3-Pin TO-63 |
New Jersey Semiconductor |
| 251 |
2N6430 |
0.500W General Purpose NPN Metal Can Transistor. 200V Vceo, 0.050A Ic, 25 hFE. |
Continental Device India Limited |
| 252 |
2N6504 |
Thyristor SCR 50V 250A 3-Pin(3+Tab) TO-220AB Bulk |
New Jersey Semiconductor |
| 253 |
2N917 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 - 200 hFE. |
Continental Device India Limited |
| 254 |
2N918 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 hFE. |
Continental Device India Limited |
| 255 |
300LD11 |
Silicon alloy diffused junction rectifier 350A 800V |
TOSHIBA |
| 256 |
300ND11 |
Silicon alloy diffused junction rectifier 350A 1000V |
TOSHIBA |
| 257 |
300QD11 |
Silicon alloy diffused junction rectifier 350A 1200V |
TOSHIBA |
| 258 |
300TD11 |
Silicon alloy diffused junction rectifier 350A 1500V |
TOSHIBA |
| 259 |
300U120A |
Diode Switching 1.2KV 250A 2-Pin DO-9 |
New Jersey Semiconductor |
| 260 |
300U120AD |
Diode Switching 1.2KV 250A 2-Pin DO-9 |
New Jersey Semiconductor |
| 261 |
300U160A |
Diode Switching 1.6KV 250A 2-Pin DO-9 |
New Jersey Semiconductor |
| 262 |
300U160AD |
Diode Switching 1.6KV 250A 2-Pin DO-9 |
New Jersey Semiconductor |
| 263 |
300WD11 |
Silicon alloy diffused junction rectifier 350A 1800V |
TOSHIBA |
| 264 |
300YD11 |
Silicon alloy diffused junction rectifier 350A 2000V |
TOSHIBA |
| 265 |
30LJQ150 |
30V 150A Hi-Rel Schottky Discrete Diode in a SMD-0.5 package |
International Rectifier |
| 266 |
35CGQ150 |
35V 150A Hi-Rel Schottky Common Cathode Diode in a TO-254AA package |
International Rectifier |
| 267 |
35GQ150 |
35V 150A Hi-Rel Schottky Discrete Diode in a TO-254AA package |
International Rectifier |
| 268 |
45L05 |
50V 150A Std. Recovery Diode in a DO-205AC (DO-30)package |
International Rectifier |
| 269 |
45L10 |
100V 150A Std. Recovery Diode in a DO-205AC (DO-30)package |
International Rectifier |
| 270 |
45L100 |
1000V 150A Std. Recovery Diode in a DO-205AC (DO-30)package |
International Rectifier |
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