| No. |
Part Name |
Description |
Manufacturer |
| 241 |
MCP2561FDT-E/SN |
Interface- Controller Area Network (CAN) |
Microchip |
| 242 |
MCP2561FDT-H/MF |
Interface- Controller Area Network (CAN) |
Microchip |
| 243 |
MCP2561FDT-H/SN |
Interface- Controller Area Network (CAN) |
Microchip |
| 244 |
MM6561F |
High precision operational amplifier |
Mitsumi Electric |
| 245 |
MOC3061FM |
6-Pin DIP 600V Zero Crossing Triac Driver Output Optocoupler |
Fairchild Semiconductor |
| 246 |
MOC3061FR2M |
6-Pin DIP 600V Zero Crossing Triac Driver Output Optocoupler |
Fairchild Semiconductor |
| 247 |
MOC3061FR2VM |
6-Pin DIP 600V Zero Crossing Triac Driver Output Optocoupler |
Fairchild Semiconductor |
| 248 |
MOC3061FVM |
6-Pin DIP 600V Zero Crossing Triac Driver Output Optocoupler |
Fairchild Semiconductor |
| 249 |
MTD1361F |
Power ICs / Stepper Motor Drivers (MTD Series) Operation : Unipolar |
Shindengen |
| 250 |
N74F8961F |
Octal latched bidirectional Futurebus transceivers (3-State + open-collector) |
Philips |
| 251 |
NJM2561F1 |
LOW VOLTAGE VIDEO AMPLIFIER WITH LPF |
New Japan Radio |
| 252 |
NJM2861F03 |
LOW DROPOUT VOLTAGE REGULATOR |
New Japan Radio |
| 253 |
NJM2861F21 |
LOW DROPOUT VOLTAGE REGULATOR |
New Japan Radio |
| 254 |
NJM2861F25 |
LOW DROPOUT VOLTAGE REGULATOR |
New Japan Radio |
| 255 |
NJM2861F26 |
LOW DROPOUT VOLTAGE REGULATOR |
New Japan Radio |
| 256 |
NJM2861F27 |
LOW DROPOUT VOLTAGE REGULATOR |
New Japan Radio |
| 257 |
NJM2861F28 |
LOW DROPOUT VOLTAGE REGULATOR |
New Japan Radio |
| 258 |
NJM2861F285 |
LOW DROPOUT VOLTAGE REGULATOR |
New Japan Radio |
| 259 |
P89LPC9361FDH |
8-bit microcontroller with accelerated two-clock 80C51 core, 4 kB/8 kB/16 kB 3 V byte-erasable flash with 8-bit ADCs |
NXP Semiconductors |
| 260 |
PT461F |
Duble-end Type Phototransistor |
SHARP |
| 261 |
RB461F |
SCHOTTKY BARRIER RECTIFIERS |
Micro Commercial Components |
| 262 |
RB461F |
Diodes > Schottky Barrier Diodes > Surface mounting rectifier type |
ROHM |
| 263 |
RB461FFH |
Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
| 264 |
RB461FFHT106 |
Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
| 265 |
RB461FT106 |
Schottky Barrier Diode |
ROHM |
| 266 |
RN1961FE |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 267 |
RN1961FS |
Bias resistor built-in transistor (BRT), 2-in-1 |
TOSHIBA |
| 268 |
RN2961FE |
Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 269 |
RN2961FS |
Bias resistor built-in transistor (BRT), 2-in-1 |
TOSHIBA |
| 270 |
S2061F |
4A sensitive-gate silicon controlled rectifier. Vrsxm 75V. |
General Electric Solid State |
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