| No. |
Part Name |
Description |
Manufacturer |
| 241 |
HM51S4260CJ-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 242 |
HM51S4260CJ-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 243 |
HM51S4260CJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 244 |
HM51S4260CJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 245 |
HM51S4260CLJ-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 246 |
HM51S4260CLJ-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 247 |
HM51S4260CLJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 248 |
HM51S4260CLJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 249 |
HM51S4260CLTT-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 250 |
HM51S4260CLTT-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 251 |
HM51S4260CLTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 252 |
HM51S4260CLTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 253 |
HM51S4260CTT-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 254 |
HM51S4260CTT-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 255 |
HM51S4260CTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 256 |
HM51S4260CTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 257 |
HM53051P-45 |
45ns; V(cc): -1.0 to +7.0V; 1W; 262,144-word x 4-bit frame memory |
Hitachi Semiconductor |
| 258 |
HM53051P-60 |
60ns; V(cc): -1.0 to +7.0V; 1W; 262,144-word x 4-bit frame memory |
Hitachi Semiconductor |
| 259 |
HM538253J-10 |
100ns; 1W; V(cc): -0.5 to +7.0V; 262,144-word x 8-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 260 |
HM538253J-7 |
70ns; 1W; V(cc): -0.5 to +7.0V; 262,144-word x 8-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 261 |
HM538253J-8 |
80ns; 1W; V(cc): -0.5 to +7.0V; 262,144-word x 8-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 262 |
HM538253RR-10 |
100ns; 1W; V(cc): -0.5 to +7.0V; 262,144-word x 8-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 263 |
HM538253RR-7 |
70ns; 1W; V(cc): -0.5 to +7.0V; 262,144-word x 8-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 264 |
HM538253RR-8 |
80ns; 1W; V(cc): -0.5 to +7.0V; 262,144-word x 8-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 265 |
HM538253TT-10 |
100ns; 1W; V(cc): -0.5 to +7.0V; 262,144-word x 8-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 266 |
HM538253TT-7 |
70ns; 1W; V(cc): -0.5 to +7.0V; 262,144-word x 8-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 267 |
HM538253TT-8 |
80ns; 1W; V(cc): -0.5 to +7.0V; 262,144-word x 8-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 268 |
HYB41256 |
262,144 BIT DYNAMIC RAM |
Siemens |
| 269 |
HYB41256-10 |
262,144 BIT DYNAMIC RAM |
Siemens |
| 270 |
HYB41256-12 |
262,144 BIT DYNAMIC RAM |
Siemens |
| | | |
