No. |
Part Name |
Description |
Manufacturer |
241 |
TC528267 |
262144 Words x 8 Bits Multiport DRAM |
TOSHIBA |
242 |
TC5565AFL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
243 |
TC5565AFL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
244 |
TC5565AFL-12 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
245 |
TC5565AFL-15 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
246 |
TC5565APL |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
247 |
TC5565APL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
248 |
TC5565APL-12 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
249 |
TC5565APL-15 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
250 |
TC57512AD-15 |
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY |
etc |
251 |
TC57512AD-15 |
150ns; V(cc): -0.6 to +7V; 1.5W; 65,536 words x 8 bits CMOS UV erasable and electrically programmable read only memory |
TOSHIBA |
252 |
TC57512AD-20 |
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY |
etc |
253 |
TC57512AD-20 |
200ns; V(cc): -0.6 to +7V; 1.5W; 65,536 words x 8 bits CMOS UV erasable and electrically programmable read only memory |
TOSHIBA |
254 |
TC581282A |
128-MBIT (16M X 8 BITS) CMOS NAND E2PROM |
TOSHIBA |
255 |
TC581282A |
128-MBIT (16M X 8 BITS) CMOS NAND E2PROM |
TOSHIBA |
256 |
TC581282AXB |
128-MBIT (16M � 8 BITS) CMOS NAND E2PROM |
TOSHIBA |
257 |
TC58128AFT |
128-MBIT (16M x 8 BITS) CMOS NAND E2PROM |
TOSHIBA |
258 |
TC5816BDC |
16 mbit (2M x 8 bits) CMOS nand flash EEPROM |
TOSHIBA |
259 |
TC582562AXB |
256-MBIT (32M x 8 BITS) CMOS NAND E2PROM |
TOSHIBA |
260 |
TC58256AFT |
256-MBIT (32M x 8 BITS) CMOS NAND E PROM |
TOSHIBA |
261 |
TC5832FT |
32 MBIT (4M X 8 BITS) CMOS NAND E2PROM |
TOSHIBA |
262 |
TC58512FT |
512-MBIT (64M x 8 BITS) CMOS NAND E2PROM |
TOSHIBA |
263 |
TC58B160FT-10 |
16 MBIT (2M x 8 bits) CMOS flash memory, 100ns |
TOSHIBA |
264 |
TC58B160FT-12 |
16 MBIT (2M x 8 bits) CMOS flash memory, 120ns |
TOSHIBA |
265 |
TC58B160FT-85 |
16 MBIT (2M x 8 bits) CMOS flash memory, 85ns |
TOSHIBA |
266 |
TC58DAM72A1FT00 |
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
TOSHIBA |
267 |
TC58DAM72F1FT00 |
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
TOSHIBA |
268 |
TC58DAM82A1FT00 |
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
TOSHIBA |
269 |
TC58DAM82F1FT00 |
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
TOSHIBA |
270 |
TC58DAMXXX |
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
TOSHIBA |
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