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Datasheets for 8,1

Datasheets found :: 279
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No. Part Name Description Manufacturer
241 KS24C040 4,096/8,192-Bit Serial EEPROM Samsung Electronic
242 KS24C041 4,096/8,192-Bit Serial EEPROM Samsung Electronic
243 KS24C080 4,096/8,192-Bit Serial EEPROM Samsung Electronic
244 KS24C081 4,096/8,192-Bit Serial EEPROM Samsung Electronic
245 MF0128M-05AA 128,188,416 bytes (memory) flash ATA PC card Mitsubishi Electric Corporation
246 MF0128M-11AT 128,188,416 bytes (memory) flash ATA PC card Mitsubishi Electric Corporation
247 MT90868 32,768 x 8,192 Channels High Bandwidth Digital Switch with up to 128 Streams on Backplane and 128 Streams on Local and Data Rates From 8 to 32 Mbps Zarlink Semiconductor
248 MT90871 8,192 x 8,192 Channels Flexible 8 k Digital Switch (F8kDX) with up to 32 Input and 32 Output Streams and Data Rates from 2 to 16 Mbps Zarlink Semiconductor
249 MT90871 8,192 x 8,192 Channels Flexible 8 k Digital Switch (F8kDX) with up to 32 Input and 32 Output Streams and Data Rates from 2 to 16 Mbps Zarlink Semiconductor
250 NM24C08 8,192-Bit Standard 2-Wire Bus Interface Serial EEPROM National Semiconductor
251 NM24C08F 8,192-Bit Standard 2-Wire Bus Interface National Semiconductor
252 NM24C08L 8,192-Bit Serial EEPROM with Extended Operating Voltage National Semiconductor
253 NM24C09 8,192-Bit Standard 2-Wire Bus Interface Serial EEPROM with Write Protect National Semiconductor
254 NM24C09F 8,192-Bit Standard 2-Wire Bus Interface Serial EEPROM National Semiconductor
255 NM24C09L 8,192-Bit Serial EEPROM with Write Protect National Semiconductor
256 NM24C09LZ 8,192-Bit Serial EEPROM with Write Protect National Semiconductor
257 TC5564AFL-15 8,192 WORD X 8 BIT CMOS STATIC RAM TOSHIBA
258 TC5564AFL-20 8,192 WORD X 8 BIT CMOS STATIC RAM TOSHIBA
259 TC5564APL-20 8,192 WORD X 8 BIT CMOS STATIC RAM TOSHIBA
260 TC5565AFL-10 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
261 TC5565AFL-10 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
262 TC5565AFL-12 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
263 TC5565AFL-15 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
264 TC5565APL 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
265 TC5565APL-10 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
266 TC5565APL-12 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
267 TC5565APL-15 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
268 UPD4464C-12 8,192 X 8 - BIT STATIC CMOS RAM NEC
269 UPD4464C-12L 8,192 X 8 - BIT STATIC CMOS RAM NEC
270 UPD4464C-15 8,192 X 8 - BIT STATIC CMOS RAM NEC


Datasheets found :: 279
Page: | 5 | 6 | 7 | 8 | 9 | 10 |



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