No. |
Part Name |
Description |
Manufacturer |
241 |
KS24C040 |
4,096/8,192-Bit Serial EEPROM |
Samsung Electronic |
242 |
KS24C041 |
4,096/8,192-Bit Serial EEPROM |
Samsung Electronic |
243 |
KS24C080 |
4,096/8,192-Bit Serial EEPROM |
Samsung Electronic |
244 |
KS24C081 |
4,096/8,192-Bit Serial EEPROM |
Samsung Electronic |
245 |
MF0128M-05AA |
128,188,416 bytes (memory) flash ATA PC card |
Mitsubishi Electric Corporation |
246 |
MF0128M-11AT |
128,188,416 bytes (memory) flash ATA PC card |
Mitsubishi Electric Corporation |
247 |
MT90868 |
32,768 x 8,192 Channels High Bandwidth Digital Switch with up to 128 Streams on Backplane and 128 Streams on Local and Data Rates From 8 to 32 Mbps |
Zarlink Semiconductor |
248 |
MT90871 |
8,192 x 8,192 Channels Flexible 8 k Digital Switch (F8kDX) with up to 32 Input and 32 Output Streams and Data Rates from 2 to 16 Mbps |
Zarlink Semiconductor |
249 |
MT90871 |
8,192 x 8,192 Channels Flexible 8 k Digital Switch (F8kDX) with up to 32 Input and 32 Output Streams and Data Rates from 2 to 16 Mbps |
Zarlink Semiconductor |
250 |
NM24C08 |
8,192-Bit Standard 2-Wire Bus Interface Serial EEPROM |
National Semiconductor |
251 |
NM24C08F |
8,192-Bit Standard 2-Wire Bus Interface |
National Semiconductor |
252 |
NM24C08L |
8,192-Bit Serial EEPROM with Extended Operating Voltage |
National Semiconductor |
253 |
NM24C09 |
8,192-Bit Standard 2-Wire Bus Interface Serial EEPROM with Write Protect |
National Semiconductor |
254 |
NM24C09F |
8,192-Bit Standard 2-Wire Bus Interface Serial EEPROM |
National Semiconductor |
255 |
NM24C09L |
8,192-Bit Serial EEPROM with Write Protect |
National Semiconductor |
256 |
NM24C09LZ |
8,192-Bit Serial EEPROM with Write Protect |
National Semiconductor |
257 |
TC5564AFL-15 |
8,192 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
258 |
TC5564AFL-20 |
8,192 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
259 |
TC5564APL-20 |
8,192 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
260 |
TC5565AFL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
261 |
TC5565AFL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
262 |
TC5565AFL-12 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
263 |
TC5565AFL-15 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
264 |
TC5565APL |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
265 |
TC5565APL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
266 |
TC5565APL-12 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
267 |
TC5565APL-15 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
268 |
UPD4464C-12 |
8,192 X 8 - BIT STATIC CMOS RAM |
NEC |
269 |
UPD4464C-12L |
8,192 X 8 - BIT STATIC CMOS RAM |
NEC |
270 |
UPD4464C-15 |
8,192 X 8 - BIT STATIC CMOS RAM |
NEC |
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