| No. |
Part Name |
Description |
Manufacturer |
| 241 |
HYS72T128000GR-37-A |
DDR2 Registered Memory Modules |
Infineon |
| 242 |
HYS72T128000GR-5-A |
DDR2 SDRAM Modules - 1 GB (128Mx72) PC2 3200 3-3-3 1Bank; available 2Q/04 |
Infineon |
| 243 |
HYS72T128000HR |
DDR2 Registered Memory Modules |
Infineon |
| 244 |
HYS72T128000HR-3.7-A |
256MB - 4GB, 240pin |
Infineon |
| 245 |
HYS72T128000HR-37-A |
DDR2 Registered Memory Modules |
Infineon |
| 246 |
HYS72T128000HR-5-A |
256MB - 4GB, 240pin |
Infineon |
| 247 |
HYS72V8000GU-10 |
3.3V 8M x 64-Bit SDRAM Module 3.3V 8M x 72-Bit SDRAM Module |
Siemens |
| 248 |
ISO7820LL |
High-Performance, 8000-VPK Reinforced Dual-Channel Digital Isolator 16-SOIC -55 to 125 |
Texas Instruments |
| 249 |
ISO7820LLDW |
High-Performance, 8000-VPK Reinforced Dual-Channel Digital Isolator 16-SOIC -55 to 125 |
Texas Instruments |
| 250 |
ISO7820LLDWR |
High-Performance, 8000-VPK Reinforced Dual-Channel Digital Isolator 16-SOIC -55 to 125 |
Texas Instruments |
| 251 |
ISO7821LL |
High-Performance, 8000 VPK Reinforced Isolated Dual LVDS Buffer 16-SOIC -55 to 125 |
Texas Instruments |
| 252 |
ISO7821LLDW |
High-Performance, 8000 VPK Reinforced Isolated Dual LVDS Buffer 16-SOIC -55 to 125 |
Texas Instruments |
| 253 |
ISO7821LLDWR |
High-Performance, 8000 VPK Reinforced Isolated Dual LVDS Buffer 16-SOIC -55 to 125 |
Texas Instruments |
| 254 |
ISO7821LLS |
High-Performance, 8000 VPK Reinforced Isolated Dual LVDS Buffer 16-SOIC -55 to 125 |
Texas Instruments |
| 255 |
ISO7821LLSDW |
High-Performance, 8000 VPK Reinforced Isolated Dual LVDS Buffer 16-SOIC -55 to 125 |
Texas Instruments |
| 256 |
ISO7821LLSDWR |
High-Performance, 8000 VPK Reinforced Isolated Dual LVDS Buffer 16-SOIC -55 to 125 |
Texas Instruments |
| 257 |
KIA8000S |
5V Voltage Regulator with Watchdog Timer |
Korea Electronics (KEC) |
| 258 |
LC378000RP |
Internally Synchronized Silicon Gate 8M (1,048,576-word x 8-bit, 524,288-word x 16-bit) Mask ROM |
SANYO |
| 259 |
LC8953 |
General-Purpose 68000 MPU Peripheral Interface IC |
SANYO |
| 260 |
M30L0R8000B0 |
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
| 261 |
M30L0R8000B0ZAQ |
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
| 262 |
M30L0R8000B0ZAQE |
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
| 263 |
M30L0R8000B0ZAQF |
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
| 264 |
M30L0R8000B0ZAQT |
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
| 265 |
M30L0R8000T0 |
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
| 266 |
M30L0R8000T0ZAQ |
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
| 267 |
M30L0R8000T0ZAQE |
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
| 268 |
M30L0R8000T0ZAQF |
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
| 269 |
M30L0R8000T0ZAQT |
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
| 270 |
M38000E1-XXXFP |
8-BIT SINGLE-CHIP MICROCOMPUTER |
Mitsubishi Electric Corporation |
| | | |
