| No. |
Part Name |
Description |
Manufacturer |
| 241 |
HIN238ACP |
High Speed +5V Powered RS-232 Transmitters/Receivers |
Intersil |
| 242 |
HMCS408AC |
CMOS 4 BIT SINGLE CHIP MICROCOMPUTER |
Hitachi Semiconductor |
| 243 |
ICL8038ACJD |
Precision Waveform Generator/ Voltage Controlled Oscillator |
Harris Semiconductor |
| 244 |
ICL8038ACJD |
Precision Waveform Generator/Voltage Controlled Oscillator |
Intersil |
| 245 |
ICL8068ACDD |
14-Bit/16-Bit, Microprocessor- Compatible, 2-Chip, A/D Converter |
Intersil |
| 246 |
ICL8068ACDD |
Precision 4 1/2 Digit, A/D Converter |
Intersil |
| 247 |
ICL8068ACJD |
14/16-bit microprocessor- compatible, 2-chip, A/D converter |
Intersil |
| 248 |
IH5048AC/D |
CMOS Analog switches |
MAXIM - Dallas Semiconductor |
| 249 |
IH5048ACJE |
CMOS Analog switches |
MAXIM - Dallas Semiconductor |
| 250 |
IH5048ACPE |
CMOS Analog switches |
MAXIM - Dallas Semiconductor |
| 251 |
IH5048ACWE |
CMOS Analog switches |
MAXIM - Dallas Semiconductor |
| 252 |
KE5BGCA128ACFP |
Gigabit CAM. Thermal resistance of the DPH SQFP package is less than the SQFP package. |
Kawasaki LSI |
| 253 |
KM416RD8AC |
128/144Mbit RDRAM |
Samsung Electronic |
| 254 |
KM416RD8AC(D)-RK70 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 255 |
KM416RD8AC(D)-RK80 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 256 |
KM416RD8AC(DB)-RCG60 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 257 |
KM416RD8AC-RG60 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
| 258 |
KM416RD8AC-RK70 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
| 259 |
KM416RD8AC-RK80 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
| 260 |
KM418RD8AC |
128/144Mbit RDRAM |
Samsung Electronic |
| 261 |
KM418RD8AC(D)-RG60 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 262 |
KM418RD8AC(D)-RK70 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 263 |
KM418RD8AC(D)-RK80 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 264 |
KM418RD8AC-RG60 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
| 265 |
KM418RD8AC-RK70 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
| 266 |
KM418RD8AC-RK80 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
| 267 |
L7808AC |
PRECISION 1A REGULATORS (AB/AC SERIES) |
SGS Thomson Microelectronics |
| 268 |
L7808AC |
PRECISION 1A REGULATORS |
ST Microelectronics |
| 269 |
L7808ACD2T |
PRECISION 1A REGULATORS |
SGS Thomson Microelectronics |
| 270 |
L7808ACD2T |
PRECISION 1A REGULATORS |
ST Microelectronics |
| | | |
