No. |
Part Name |
Description |
Manufacturer |
241 |
IC61SF51218D-7.5TQ |
7.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
242 |
IC61SF51218D-7.5TQI |
7.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
243 |
IC61SF51218D-8.5B |
8.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
244 |
IC61SF51218D-8.5BI |
8.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
245 |
IC61SF51218D-8.5TQ |
8.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
246 |
IC61SF51218D-8.5TQI |
8.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
247 |
IC61SF51218D-9.5B |
9.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
248 |
IC61SF51218D-9.5BI |
9.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
249 |
IC61SF51218D-9.5TQ |
9.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
250 |
IC61SF51218D-9.5TQI |
9.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
251 |
IRGP4068D-EPBF |
600V UltraFast Copack Trench IGBT in a TO-247 package with Ultra-Low VF Diode for Induction Heating and Soft Switching Apps |
International Rectifier |
252 |
IRGP4078D-EPBF |
600V Co-Pack IGBT with Ultra-Low VF in a TO-247 package |
International Rectifier |
253 |
IS61LF51218D-10B |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
254 |
IS61LF51218D-10TQ |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
255 |
IS61LF51218D-10TQI |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
256 |
IS61LF51218D-8.5B |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
257 |
IS61LF51218D-8.5TQ |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
258 |
IS61LF51218D-8.5TQI |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
259 |
IS61LF51218D-9B |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
260 |
IS61LF51218D-9TQ |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
261 |
IS61LF51218D-9TQI |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
262 |
IS61LPD51218D-133B |
512K x 18 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
263 |
IS61LPD51218D-133TQ |
512K x 18 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
264 |
IS61LPD51218D-133TQI |
512K x 18 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
265 |
IS61LPD51218D-150B |
512K x 18 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
266 |
IS61LPD51218D-150TQ |
512K x 18 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
267 |
IS61LPD51218D-5B |
512K x 18 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
268 |
IS61LPD51218D-5TQ |
512K x 18 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
269 |
IS61LPD51218D-5TQI |
512K x 18 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
270 |
IS61LPS51218D-133B |
512K x 18 synchronous pipeline, single-cycle deselect static RAM |
Integrated Silicon Solution Inc |
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