| No. |
Part Name |
Description |
Manufacturer |
| 241 |
EM658160TS-3.5 |
285MHz 4M x 16 DDR synchronous DRAM (SDRAM) |
Etron Tech |
| 242 |
EM6A9320BI-3.5 |
285MHz 2.8V 4M x 32 DDR SDRAM |
Etron Tech |
| 243 |
ET4000 |
28 x 1 GBit |
Agere Systems |
| 244 |
GBPC1504-G |
Bridge Rectifiers, VRRM=280V, VDC=280V, I(AV)=15A |
Comchip Technology |
| 245 |
GBPC1504-G |
Bridge Rectifiers, VRRM=280V, VDC=280V, I(AV)=15A |
Comchip Technology |
| 246 |
GLT44016-28J4 |
28ns; 256k x 16 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 247 |
GLT44016-28TC |
28ns; 256k x 16 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 248 |
GPDH3170 |
2800 V rectifier diode |
Green Power |
| 249 |
HMBZ5255B |
28V 4.5A zener diode |
Hi-Sincerity Microelectronics |
| 250 |
HMM5255B |
28V 4.5A zener diode |
Hi-Sincerity Microelectronics |
| 251 |
INA230AIRGTR |
28-V, Bi-Directional, Zero-Drift, Low-/High-Side, I2C Out Current/Power Monitor w/ Alert 16-QFN -40 to 125 |
Texas Instruments |
| 252 |
INA230AIRGTT |
28-V, Bi-Directional, Zero-Drift, Low-/High-Side, I2C Out Current/Power Monitor w/ Alert 16-QFN -40 to 125 |
Texas Instruments |
| 253 |
INA231AIYFFR |
28-V, Bi-Directional, Zero-Drift, Low-/High-Side, I2C Out Current/Power Monitor w/ Alert in WCSP 12-DSBGA -40 to 125 |
Texas Instruments |
| 254 |
INA231AIYFFT |
28-V, Bi-Directional, Zero-Drift, Low-/High-Side, I2C Out Current/Power Monitor w/ Alert in WCSP 12-DSBGA -40 to 125 |
Texas Instruments |
| 255 |
IRF140 |
28A/ 100V/ 0.077 Ohm/ N-Channel Power MOSFET |
Intersil |
| 256 |
IRF141 |
28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs |
Intersil |
| 257 |
IRF142 |
28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs |
Intersil |
| 258 |
IRF143 |
28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs |
Intersil |
| 259 |
IRF540 |
28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
| 260 |
IRF7811A |
28V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 261 |
IRF7811ATR |
28V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 262 |
IRF7811ATRPBF |
28V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 263 |
IRL540S |
28A 100V power MOSFET |
BayLinear |
| 264 |
IRL540T |
28A 100V power MOSFET |
BayLinear |
| 265 |
ISPLSI2064VE-280LB100 |
280 MHz 3.3V in-system prommable superFAST high density PLD |
Lattice Semiconductor |
| 266 |
ISPLSI2064VE-280LT100 |
280 MHz 3.3V in-system prommable superFAST high density PLD |
Lattice Semiconductor |
| 267 |
ISPLSI2064VE-280LT44 |
280 MHz 3.3V in-system prommable superFAST high density PLD |
Lattice Semiconductor |
| 268 |
J28A |
28 Lead Ceramic Dual-in-Line Package |
National Semiconductor |
| 269 |
J28AQ |
28 Lead Ceramic Dual-in-Line Package, EPROM |
National Semiconductor |
| 270 |
J28B |
28 Lead Ceramic Dual-in-Line Package |
National Semiconductor |
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