| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2N6935 |
Trans GP BJT PNP 60V 0.6A 14-Pin TO-116 |
New Jersey Semiconductor |
| 242 |
2N7002K |
Small Signal MOSFET 60V 380mA 1.6 Ohm Single N-Channel SOT-23 |
ON Semiconductor |
| 243 |
2N7002W |
Small Signal MOSFET 60V 340mA 1.6 Ohm Single N-Channel SC-70 |
ON Semiconductor |
| 244 |
2SK445 |
N-Channel Junction Silicon FET Video Camera 1st Stage Applications |
SANYO |
| 245 |
300ND11 |
Silicon alloy diffused junction rectifier 350A 1000V |
TOSHIBA |
| 246 |
300QD11 |
Silicon alloy diffused junction rectifier 350A 1200V |
TOSHIBA |
| 247 |
300TD11 |
Silicon alloy diffused junction rectifier 350A 1500V |
TOSHIBA |
| 248 |
300WD11 |
Silicon alloy diffused junction rectifier 350A 1800V |
TOSHIBA |
| 249 |
30CLJQ100 |
30A 100V Hi-Rel Schottky Common Cathode Diode in a SMD-0.5 package |
International Rectifier |
| 250 |
30CLJQ150 |
30A 150V Hi-Rel Schottky Common Cathode Diode in a SMD-0.5 package |
International Rectifier |
| 251 |
30LJQ100SCS |
30A 100V Hi-Rel Schottky Discrete Diode in a SMD-0.5 package |
International Rectifier |
| 252 |
35CGQ100 |
35A 100V Hi-Rel Schottky Common Cathode Diode in a TO-254AA package |
International Rectifier |
| 253 |
35CGQ100SCS |
35A 100V Hi-Rel Schottky Common Cathode Diode in a TO-254AA package DLA Number 1N7062CCT1 |
International Rectifier |
| 254 |
35CGQ150SCS |
35A 150V Hi-Rel Schottky Common Cathode Diode in a TO-254AA package |
International Rectifier |
| 255 |
35GQ100SCS |
35A 100V Hi-Rel Schottky Discrete Diode in a TO-254AA package DLA Number 1N7069T1 |
International Rectifier |
| 256 |
35GQ150SCS |
35A 150V Hi-Rel Schottky Discrete Diode in a TO-254AA package |
International Rectifier |
| 257 |
35PD1M-TO |
The 35PD1M-TO, an InGaAs photodiode with a 1mm-diameter photosensitive packaged in a TO-46 header, is designed for applications in ... |
Anadigics Inc |
| 258 |
3BZ61 |
Silicon diffused junction rectifier 3A 100V |
TOSHIBA |
| 259 |
3CC13 |
Silicon diffused junction rectifier 3A 150V |
TOSHIBA |
| 260 |
3CD13 |
Silicon diffused junction rectifier 3A 150V |
TOSHIBA |
| 261 |
3LP01C |
P-Channel Small Signal MOSFET -30V -0.1A 10.4Ohm Single CP |
ON Semiconductor |
| 262 |
3LP01M |
P-Channel Small Signal MOSFET -30V -100mA 10.4 OhmsSingle MCP |
ON Semiconductor |
| 263 |
3LP01S |
P-Channel Small Signal MOSFET -30V -0.1A 10.4Ohm Single SMCP |
ON Semiconductor |
| 264 |
3NC12 |
Silicon diffused junction rectifier 3A 1000V |
TOSHIBA |
| 265 |
3NF11 |
Silicon alloy-diffused junction avalanche rectifier 3A 1000V |
TOSHIBA |
| 266 |
3PM1 |
3.2A 100V Single Phase Rectifier Bridge |
IPRS Baneasa |
| 267 |
3QF11 |
Silicon alloy-diffused junction avalanche rectifier 3A 1200V |
TOSHIBA |
| 268 |
40525 |
2.5A 100V Sensitive-Gate Silicon Triacs |
RCA Solid State |
| 269 |
40528 |
2.5A 100V Sensitive-Gate Silicon Triacs |
RCA Solid State |
| 270 |
40531 |
2.5A 100V Sensitive-Gate Silicon Triacs |
RCA Solid State |
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