| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2SA1607 |
PNP Epitaxial Planar Silicon Transistors High-Speed Switching Applications |
SANYO |
| 242 |
2SA1608 |
HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR |
NEC |
| 243 |
2SA1608-T1 |
Silicon transistor |
NEC |
| 244 |
2SA1608-T2 |
Silicon transistor |
NEC |
| 245 |
2SA1610 |
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR |
NEC |
| 246 |
2SA1610-T1 |
Silicon transistor |
NEC |
| 247 |
2SA1610-T2 |
Silicon transistor |
NEC |
| 248 |
2SA1611 |
Silicon transistor |
NEC |
| 249 |
2SA1611-T1 |
Silicon transistor |
NEC |
| 250 |
2SA1611-T2 |
Silicon transistor |
NEC |
| 251 |
2SA1612 |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR |
NEC |
| 252 |
2SA1612-T1 |
Silicon transistor |
NEC |
| 253 |
2SA1612-T2 |
Silicon transistor |
NEC |
| 254 |
2SA1614 |
For high-speed switching |
Panasonic |
| 255 |
2SA1615 |
Silicon transistor |
NEC |
| 256 |
2SA1615(1) |
Silicon transistor |
NEC |
| 257 |
2SA1615-Z |
Silicon transistor |
NEC |
| 258 |
2SA1617 |
Silicon PNP Epitaxial |
Hitachi Semiconductor |
| 259 |
2SA1617 |
Silicon PNP Transistor |
Hitachi Semiconductor |
| 260 |
2SA1618 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 261 |
2SA1619 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 262 |
2SA1619A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 263 |
2SA1620 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
| 264 |
2SA1621 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Power Amplifier Applications |
TOSHIBA |
| 265 |
2SA1624 |
PNP EPITAXIAL PLANAR SILICON TRANSISTOR |
SANYO |
| 266 |
2SA1625 |
PNP SILICON TRANSISTOR(general purpose amplifier and high speed switching) |
NEC |
| 267 |
2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W. |
USHA India LTD |
| 268 |
2SA1625-T |
Silicon transistor |
NEC |
| 269 |
2SA1625-T/JD |
Silicon transistor |
NEC |
| 270 |
2SA1625-T/JM |
Silicon transistor |
NEC |
| | | |
