| No. |
Part Name |
Description |
Manufacturer |
| 241 |
BGY26FA-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 242 |
BGY27DA-1D |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 243 |
BGY27DB-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 244 |
BGY27E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 245 |
DSA4002 |
Silicon PNP epitaxial planar type - For general amplification - Complementary to DSC4002 |
Panasonic |
| 246 |
DSA4005 |
Silicon PNP epitaxial planar type - For general amplification - Complementary to DSC4005 |
Panasonic |
| 247 |
DSC3F01 |
Silicon NPN epitaxial planar type - For high-frequency amplification - DSC9F01 in SSSMini3 type package |
Panasonic |
| 248 |
DSC4005 |
Silicon NPN epitaxial planar type - For general amplification - Complementary to DSA4005 |
Panasonic |
| 249 |
DSC4501 |
Silicon NPN epitaxial planar type - For low frequency amplification - DSC2501 in NS through hole type package |
Panasonic |
| 250 |
DSC8004 |
Silicon NPN epitaxial planar type - For low frequency output amplification - Complementary to DSA8004 |
Panasonic |
| 251 |
DSC8505 |
Silicon NPN epitaxial planar type - For low frequency output amplification - DSC7505 in MT-2 through hole type package |
Panasonic |
| 252 |
DSC8P01 |
Silicon NPN epitaxial planar type darlington - For low frequency output amplification - Darlington connection |
Panasonic |
| 253 |
DSC8Q01 |
Silicon NPN epitaxial planar type darlington - For low frequency output amplification - Darlington connection |
Panasonic |
| 254 |
EML22 |
NPN General Purpose Amplification Transistor + Zener Diode |
ROHM |
| 255 |
EML22T2R |
NPN General Purpose Amplification Transistor + Zener Diode |
ROHM |
| 256 |
EMT1FHA |
PNP+PNP General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 257 |
EMT1FHAT2L |
PNP+PNP General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 258 |
EMT1T2R |
PNP+PNP General Purpose Amplification Transistor |
ROHM |
| 259 |
EMX1FHA |
NPN+NPN General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 260 |
EMX1FHAT2R |
NPN+NPN General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 261 |
EMX1T2R |
NPN+NPN General Purpose Amplification Transistor |
ROHM |
| 262 |
EMY1T2R |
PNP+NPN General Purpose Amplification Transistor |
ROHM |
| 263 |
EMZ1FHA |
PNP+NPN General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 264 |
EMZ1FHAT2L |
PNP+NPN General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 265 |
EMZ1T2R |
PNP+NPN General Purpose Amplification Transistor |
ROHM |
| 266 |
EMZ8T2R |
PNP Low VCE(sat) Transistor + NPN General Purpose Amplification Transistor |
ROHM |
| 267 |
FMY1AT148 |
PNP+NPN General Purpose Amplification Transistor |
ROHM |
| 268 |
FMY4AT148 |
PNP+NPN General Purpose Amplification Transistor |
ROHM |
| 269 |
HN1A01FE |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 270 |
HN1A02F |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| | | |
