No. |
Part Name |
Description |
Manufacturer |
241 |
1N916A |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
242 |
1N916B |
Silicon Planar Diode |
ITT Semiconductors |
243 |
1N916B |
Silicon epitaxial planar diode |
Mikroelektronikai Vallalat |
244 |
1N916B |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
245 |
1N920 |
Silicon Planar Diode |
ITT Semiconductors |
246 |
1N921 |
Silicon Planar Diode |
ITT Semiconductors |
247 |
1N922 |
Silicon Planar Diode |
ITT Semiconductors |
248 |
1N925 |
Silicon Planar Diode |
ITT Semiconductors |
249 |
1N926 |
Silicon Planar Diode |
ITT Semiconductors |
250 |
1N927 |
Silicon Planar Diode |
ITT Semiconductors |
251 |
1N928 |
Silicon Planar Diode |
ITT Semiconductors |
252 |
1N929 |
Silicon Planar Diode |
ITT Semiconductors |
253 |
1N930 |
Silicon Planar Diode |
ITT Semiconductors |
254 |
1N931 |
Silicon Planar Diode |
ITT Semiconductors |
255 |
1N934 |
Silicon Planar Diode |
ITT Semiconductors |
256 |
1N993 |
Silicon Planar Diode |
ITT Semiconductors |
257 |
1S1219H |
Silicon Epitaxial Planar Diode, used for High Speed Switching |
Hitachi Semiconductor |
258 |
1S1220H |
Silicon Epitaxial Planar Diode, used for High Speed Switching |
Hitachi Semiconductor |
259 |
1S1314 |
Silicon planar diode, communication and industrial applications, Low-Level Modulation |
TOSHIBA |
260 |
1S1553 |
Silicon epitaxial planar diode, general purpose Application for Detector and Rectifier |
TOSHIBA |
261 |
1S1554 |
Silicon epitaxial planar diode, general purpose Application for Detector and Rectifier |
TOSHIBA |
262 |
1S1555 |
Silicon epitaxial planar diode, general purpose Application for Detector and Rectifier |
TOSHIBA |
263 |
1S1579 |
Silicon planar diode, TV Horizontal circuit AFC Application, dual in one case, common cathoad |
TOSHIBA |
264 |
1S1580 |
Silicon planar diode, TV Horizontal circuit AFC Application, dual in one case, common cathoad |
TOSHIBA |
265 |
1S2074 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
266 |
1S2074H |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
267 |
1S2075 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
268 |
1S2075K |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
269 |
1S2076 |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-35V, VR=-30V |
Hitachi Semiconductor |
270 |
1S2076A |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-70V, VR=-60V |
Hitachi Semiconductor |
| | | |