| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2SK3366-Z-E1 |
N-channel enhancement type Po MOS FET |
NEC |
| 242 |
2SK3366-Z-E2 |
N-channel enhancement type Po MOS FET |
NEC |
| 243 |
2SK3367-Z-E1 |
N-channel enhancement type Po MOS FET |
NEC |
| 244 |
2SK3367-Z-E2 |
N-channel enhancement type Po MOS FET |
NEC |
| 245 |
2SK3503 |
N Channel enhancement MOS FET |
NEC |
| 246 |
2SK3503-T1 |
N Channel enhancement MOS FET |
NEC |
| 247 |
2SK3503-T2 |
N Channel enhancement MOS FET |
NEC |
| 248 |
2SK3576 |
N Channel enhancement MOS FET |
NEC |
| 249 |
2SK3576-T1B |
N Channel enhancement MOS FET |
NEC |
| 250 |
2SK3576-T2B |
N Channel enhancement MOS FET |
NEC |
| 251 |
2SK3577 |
N Channel enhancement MOS FET |
NEC |
| 252 |
2SK3577-T1B |
N Channel enhancement MOS FET |
NEC |
| 253 |
2SK3577-T2B |
N Channel enhancement MOS FET |
NEC |
| 254 |
2SK3663 |
N-Channel enhancement MOS FET for load sw |
NEC |
| 255 |
2SK3664 |
N-Channel enhancement MOS FET for load sw |
NEC |
| 256 |
2SK3995 |
Silicon N-channel enhancement MOSFET |
Panasonic |
| 257 |
2SK4174 |
Silicon N-channel enhancement MOS FET |
Panasonic |
| 258 |
2SK4208 |
Silicon N-channel enhancement MOS FET |
Panasonic |
| 259 |
2SK536 |
N-Channel Enhancement MOS Silicon FET Analog Switch Applications |
SANYO |
| 260 |
2SK583 |
N-Channel Enhancement Silicon MOSFET Analog Switch Applications |
SANYO |
| 261 |
2SK669 |
N-Channel Enhancement Silicon MOSFET Very High-Speed Switch, Analog Switch Applications |
SANYO |
| 262 |
3055L |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
| 263 |
3N155 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 264 |
3N155A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 265 |
3N156 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 266 |
3N156A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 267 |
3N157 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 268 |
3N157A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 269 |
3N158 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 270 |
3N158A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
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