| No. |
Part Name |
Description |
Manufacturer |
| 241 |
ATF-25570 |
0.5-10 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 242 |
ATF-25735 |
0.5-10 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 243 |
ATF-26836 |
2-16 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 244 |
ATF-26836-STR |
2-16 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 245 |
ATF-26836-TR1 |
2-16 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 246 |
ATF-26884 |
2-16 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 247 |
ATF-26884-STR |
2-16 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 248 |
ATF-26884-TR1 |
2-16 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 249 |
ATF-44101 |
2-8 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 250 |
ATF-45101 |
2-8 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 251 |
ATF-45171 |
2-8 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 252 |
ATF-46101 |
2-10 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 253 |
ATF-46171 |
2-10 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 254 |
ATF10136 |
0.5-12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 255 |
ATF10236 |
0.5?12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 256 |
ATF10736 |
0.5?12 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 257 |
ATF13786 |
Surface Mount Gallium Arsenide FET for Oscillators |
Agilent (Hewlett-Packard) |
| 258 |
ATF26884 |
2-16 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 259 |
BCR108S E6327 |
Dual Built-in Resistor AF Transistors; 2xNPN; Industrial Standars Types, Icmax of 100mA; Vceo of 50V |
Infineon |
| 260 |
BCR15PN |
Dual Built-in Resistor AF Transistors; NPN/PNP; Industrial Standars Types, Icmax of 100mA; Vceo of 50V |
Infineon |
| 261 |
BCR22PN |
Dual Built-in Resistor AF Transistors; NPN/PNP; Industrial Standars Types, Icmax of 100mA; Vceo of 50V |
Infineon |
| 262 |
CAY10 |
Gallium arsenide diode, diffused mesa type, for use in microwave parametric amplifiers, frequency multipliers and switches |
Mullard |
| 263 |
CAY10 |
Gallium Arsenide parametric amplifier Varactor Diode |
Philips |
| 264 |
CDB473E |
Dual JK master - slave flip - flop with separate clears and clocks, pinout |
IPRS Baneasa |
| 265 |
CDB473EM |
Dual JK master - slave flip - flop with separate clears and clocks, pinout |
IPRS Baneasa |
| 266 |
CDB476E |
Dual JK master - slave flip-flops with separate presets, clears and clocks, pinout |
IPRS Baneasa |
| 267 |
CDB476EM |
Dual JK master - slave flip-flops with separate presets, clears and clocks, pinout |
IPRS Baneasa |
| 268 |
CGY11A |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 269 |
CGY11B |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 270 |
CGY12A |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| | | |
