| No. |
Part Name |
Description |
Manufacturer |
| 241 |
1N5762A |
Silicon 3-layer bilateral trigger |
Motorola |
| 242 |
1NZ70 |
Zener diode for stabilisation |
Tesla Elektronicke |
| 243 |
1S1286 |
Mobile alternator diode |
TOSHIBA |
| 244 |
1S1286R |
Mobile alternator diode |
TOSHIBA |
| 245 |
1S1287 |
Mobile alternator diode |
TOSHIBA |
| 246 |
1S1287R |
Mobile alternator diode |
TOSHIBA |
| 247 |
1S1288 |
Mobile alternator diode |
TOSHIBA |
| 248 |
1S1288R |
Mobile alternator diode |
TOSHIBA |
| 249 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 250 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 251 |
1S754H |
Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 252 |
1S755H |
Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 253 |
1S756H |
Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 254 |
1S757H |
Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 255 |
1S758H |
Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 256 |
1S759H |
Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 257 |
1S760H |
Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 258 |
1S761H |
Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 259 |
1S762H |
Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 260 |
1S763H |
Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 261 |
1S764H |
Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 262 |
1S765H |
Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 263 |
1S770 |
Mobile alternator diode |
TOSHIBA |
| 264 |
1S770R |
Mobile alternator diode |
TOSHIBA |
| 265 |
20463-12 |
Smart HSF mobile modem |
Conexant |
| 266 |
21DQ10 |
HIGH SURGE CAPABILITY 30VOLTS TROUGH 100VOLTS TYPE AVAILABLE |
Nihon |
| 267 |
233 |
CHOPPER STABILIZED AMPLIFER |
Intronics |
| 268 |
233A |
CHOPPER STABILIZED AMPLIFER |
Intronics |
| 269 |
24AA32A |
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C™ compatible 2-wire serial interface bus. The 24AA32A features a page-write capability of up to 32 bytes of data and is capable of both r |
Microchip |
| 270 |
24C04A |
The 24C04A is a 4K bit Serial Electrically Erasable PROM. The 24C04A features an I2C™ compatible 2-wire serial interface bus and hardware write protection for the upper half of the block. The 24C04A has a page write capabil |
Microchip |
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