| No. |
Part Name |
Description |
Manufacturer |
| 241 |
1N3773 |
25 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 242 |
1N4001 |
50 V, silicon rectifier diode |
BKC International Electronics |
| 243 |
1N4001A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
| 244 |
1N4002 |
100 V, silicon rectifier diode |
BKC International Electronics |
| 245 |
1N4002A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
| 246 |
1N4003 |
200 V, silicon rectifier diode |
BKC International Electronics |
| 247 |
1N4003A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
| 248 |
1N4004 |
400 V, silicon rectifier diode |
BKC International Electronics |
| 249 |
1N4004A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
| 250 |
1N4005 |
600 V, silicon rectifier diode |
BKC International Electronics |
| 251 |
1N4005A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
| 252 |
1N4006 |
800 V, silicon rectifier diode |
BKC International Electronics |
| 253 |
1N4006A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
| 254 |
1N4007 |
1000 V, silicon rectifier diode |
BKC International Electronics |
| 255 |
1N4007A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
| 256 |
1N4009 |
25 V, 500 mW ultra high speed diode |
BKC International Electronics |
| 257 |
1N4148 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 258 |
1N4148-1 |
100 V, 500 mW silicon switching diode |
BKC International Electronics |
| 259 |
1N4149 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 260 |
1N4150-1 |
75 V, 500 mW silicon switching diode |
BKC International Electronics |
| 261 |
1N4151 |
50 V, 500 mW high speed diode |
BKC International Electronics |
| 262 |
1N4152 |
30 V, 500 mW high speed diode |
BKC International Electronics |
| 263 |
1N4153 |
50 V, 500 mW high speed diode |
BKC International Electronics |
| 264 |
1N4153-1 |
75 V, 500 mW silicon switching diode |
BKC International Electronics |
| 265 |
1N4154 |
25 V, 500 mW high speed diode |
BKC International Electronics |
| 266 |
1N4154-1 |
75 V, 500 mW silicon switching diode |
BKC International Electronics |
| 267 |
1N417 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 268 |
1N418 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 269 |
1N419 |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 270 |
1N4305 |
50 V, 500 mW ultra fast low capacitance diode |
BKC International Electronics |
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