No. |
Part Name |
Description |
Manufacturer |
241 |
2N2905A |
0.600W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.600A Ic, 50 hFE. |
Continental Device India Limited |
242 |
2N2906 |
0.400W Switching PNP Metal Can Transistor. 40V Vceo, 0.600A Ic, 20 hFE. |
Continental Device India Limited |
243 |
2N2906A |
0.400W Switching PNP Metal Can Transistor. 60V Vceo, 0.600A Ic, 40 hFE. |
Continental Device India Limited |
244 |
2N2907 |
0.400W Switching PNP Metal Can Transistor. 40V Vceo, 0.600A Ic, 30 hFE. |
Continental Device India Limited |
245 |
2N2907 |
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
246 |
2N2907A |
0.400W Switching PNP Metal Can Transistor. 60V Vceo, 0.600A Ic, 50 hFE. |
Continental Device India Limited |
247 |
2N2993 |
Bipolar NPN Device in a Hermetically sealed TO5 Metal Package |
SemeLAB |
248 |
2N3019 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, A Ic, 50 hFE. |
Continental Device India Limited |
249 |
2N3020 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, A Ic, 30 - 100 hFE. |
Continental Device India Limited |
250 |
2N3053 |
5.000W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.700A Ic, 50 - 250 hFE. |
Continental Device India Limited |
251 |
2N3053A |
7.000W General Purpose NPN Metal Can Transistor. 60V Vceo, 0.700A Ic, 25 hFE. |
Continental Device India Limited |
252 |
2N3055 |
115.000W Power NPN Metal Can Transistor. 60V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
253 |
2N3055HV |
90.000W Power NPN Metal Can Transistor. 100V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
254 |
2N3114CSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
SemeLAB |
255 |
2N3174 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
256 |
2N3202 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
257 |
2N322 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
258 |
2N323 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
259 |
2N324 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
260 |
2N3244 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
261 |
2N3250 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
262 |
2N3250A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
263 |
2N3251 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 80 hFE. |
Continental Device India Limited |
264 |
2N3251A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 90 hFE. |
Continental Device India Limited |
265 |
2N331 |
PNP germanium transistor for audio range amplifier and switching service in military equipment |
Motorola |
266 |
2N3415 |
0.360W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.500A Ic, 180 - 540 hFE |
Continental Device India Limited |
267 |
2N3439 |
1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
268 |
2N3440 |
1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
269 |
2N3445 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
270 |
2N3447 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
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