| No. |
Part Name |
Description |
Manufacturer |
| 241 |
29C021PM-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
| 242 |
29C021TC-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 243 |
29C021TC-2 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
| 244 |
29C021TC-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
| 245 |
29C021TI-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 246 |
29C021TI-2 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
| 247 |
29C021TI-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
| 248 |
29C021TM-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 249 |
29C021TM-2 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
| 250 |
29C021TM-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
| 251 |
29F01 |
4-Bit Bipolar Microprocessor Slice |
Fairchild Semiconductor |
| 252 |
2K30A |
DSP56301 Digital Signal Processor |
Motorola |
| 253 |
2N3903 |
Silicon NPN Epitaxial transistor (PCT Process) |
TOSHIBA |
| 254 |
2N3904 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 255 |
2N3905 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 256 |
2N3906 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
| 257 |
2N4123 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 258 |
2N4124 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 259 |
2N4125 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
| 260 |
2N4126 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
| 261 |
2N4400 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 262 |
2N4401 |
Silicon NPN epitaxial planar transistor (PCT Process) |
TOSHIBA |
| 263 |
2N4402 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
| 264 |
2N4403 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
| 265 |
2N5400 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
| 266 |
2N5401 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
| 267 |
2N5550 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 268 |
2N5551 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 269 |
2N6551 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 270 |
2N6552 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
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