| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2N6126 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 242 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 243 |
2N6312 |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
| 244 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
| 245 |
2N696S |
NPN silicon annular transistor designed for small-signal amplifier and general purpose switching applications |
Motorola |
| 246 |
2N697S |
NPN silicon annular transistor designed for small-signal amplifier and general purpose switching applications |
Motorola |
| 247 |
2N7000A |
SMOS FET/ Interface and Switching Application |
Korea Electronics (KEC) |
| 248 |
2N7002A |
SMOS FET/ Interface and Switching Application |
Korea Electronics (KEC) |
| 249 |
2N705 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 250 |
2N705JAN |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 251 |
2N706 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 252 |
2N706 |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 253 |
2N706A |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 254 |
2N706B |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 255 |
2N708 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 256 |
2N708 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
| 257 |
2N711 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 258 |
2N711A |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 259 |
2N711B |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 260 |
2N744 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
| 261 |
2N753 |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 262 |
2N827 |
PNP germanium mesa transistor for high-speed switching applications, TO-18 case |
Motorola |
| 263 |
2N828 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 264 |
2N828A |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 265 |
2N829 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 266 |
2N834 |
NPN silicon epitaxial transistor for high-speed switching applications |
Motorola |
| 267 |
2N835 |
NPN silicon epitaxial transistor for high-speed switching applications |
Motorola |
| 268 |
2N838 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 269 |
2N869A |
PNP silicon annular low-power transistor designed for medium-speed, saturated switching applications |
Motorola |
| 270 |
2N914 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
| | | |
