| No. |
Part Name |
Description |
Manufacturer |
| 241 |
DSC1001CL1-125.0000 |
Clock and Timing - Oscillators |
Microchip |
| 242 |
DSC1003CL1-048.0000T |
Clock and Timing - Oscillators |
Microchip |
| 243 |
DSC1003CL1-095.0000T |
Clock and Timing - Oscillators |
Microchip |
| 244 |
DSC1123CL1-150.0000 |
Clock and Timing - Oscillators |
Microchip |
| 245 |
FCL101 |
Non-inverting Schmitt-trigger circuit Tripping levels set by external resistor or zener diode |
Mullard |
| 246 |
FCL10A015 |
Extremely Low Forward Voltage drop Diode |
Nihon |
| 247 |
FM24CL16 |
16Kb FRAM Serial 3V Memory |
Ramtron International |
| 248 |
FM24CL16 |
16Kb FRAM Serial 3V Memory |
Ramtron International |
| 249 |
FM24CL16-G |
16Kb FRAM Serial 3V Memory |
Ramtron International |
| 250 |
FM24CL16-S |
16Kb FRAM Serial 3V Memory |
Ramtron International |
| 251 |
FM24CL16B-DG |
16-Kbit (2 K � 8) Serial (I2C) F-RAM |
Cypress |
| 252 |
FM24CL16B-DGTR |
16-Kbit (2 K � 8) Serial (I2C) F-RAM |
Cypress |
| 253 |
FM24CL16B-G |
16-Kbit (2 K � 8) Serial (I2C) F-RAM |
Cypress |
| 254 |
FM24CL16B-GTR |
16-Kbit (2 K � 8) Serial (I2C) F-RAM |
Cypress |
| 255 |
HANDLING |
ECL100K, ECL10K Handling precautions, aganst electrostatic charge, prevention of reverse insertion of IC pinout, cooling, etc. |
Hitachi Semiconductor |
| 256 |
HANDLING |
ECL100K, ECL10K Handling precautions, aganst electrostatic charge, prevention of reverse insertion of IC pinout, cooling, etc. |
Hitachi Semiconductor |
| 257 |
HYE18P32160ACL125 |
32M Synchronous Burst CellularRAM |
Infineon |
| 258 |
HYE18P32160ACL15 |
32M Synchronous Burst CellularRAM |
Infineon |
| 259 |
IRG7T150CL12B |
1200V 150A Ultra Fast IGBT Chopper (Low Side) module packaged in POWIR 62 package |
International Rectifier |
| 260 |
IRG7T200CL12B |
1200V 200A Ultra Fast IGBT Chopper (Low Side) module packaged in POWIR 62 package |
International Rectifier |
| 261 |
IRG7T300CL12B |
1200V 300A Ultra Fast IGBT Chopper (Low Side) module packaged in POWIR 62 package |
International Rectifier |
| 262 |
IRKCL132-06S10 |
600V Fast Recovery Diode in a INT-A-Pak package |
International Rectifier |
| 263 |
IRKCL132-10S10 |
1000V Fast Recovery Diode in a INT-A-Pak package |
International Rectifier |
| 264 |
IRKCL132-12S20 |
1200V Fast Recovery Diode in a INT-A-Pak package |
International Rectifier |
| 265 |
IRKCL132-14S20 |
1400V Fast Recovery Diode in a INT-A-Pak package |
International Rectifier |
| 266 |
K4S280832B-TCL10 |
4M x 8Bit x 4 Banks Sychronous DRAM |
Samsung Electronic |
| 267 |
K4S280832B-TCL1H |
4M x 8Bit x 4 Banks Sychronous DRAM |
Samsung Electronic |
| 268 |
K4S280832B-TCL1L |
4M x 8Bit x 4 Banks Sychronous DRAM |
Samsung Electronic |
| 269 |
MC6801CL1 |
1.0MHz; V(cc / in): -0.3 to +7.0V; 8-bit single-chip microcomputer (MCU) |
Motorola |
| 270 |
MC6801CL1-1 |
1.25MHz; V(cc / in): -0.3 to +7.0V; 8-bit single-chip microcomputer (MCU) |
Motorola |
| | | |
