No. |
Part Name |
Description |
Manufacturer |
241 |
CL8636AQC160-3 |
Laser-configured ASIC |
CLEARLOGIC |
242 |
CL8636AQC160-4 |
Laser-configured ASIC |
CLEARLOGIC |
243 |
CL8636AQC208-2 |
Laser-configured ASIC |
CLEARLOGIC |
244 |
CL8636AQC208-3 |
Laser-configured ASIC |
CLEARLOGIC |
245 |
CL8636AQC208-4 |
Laser-configured ASIC |
CLEARLOGIC |
246 |
CL8820AQC160-2 |
Laser-configured ASIC |
CLEARLOGIC |
247 |
CL8820AQC160-3 |
Laser-configured ASIC |
CLEARLOGIC |
248 |
CL8820AQC160-4 |
Laser-configured ASIC |
CLEARLOGIC |
249 |
CL8820AQC208-2 |
Laser-configured ASIC |
CLEARLOGIC |
250 |
CL8820AQC208-3 |
Laser-configured ASIC |
CLEARLOGIC |
251 |
CL8820AQC208-4 |
Laser-configured ASIC |
CLEARLOGIC |
252 |
CL8820AQI208-4 |
Laser-configured ASIC |
CLEARLOGIC |
253 |
CL8820ATC144-2 |
Laser-configured ASIC |
CLEARLOGIC |
254 |
CL8820ATC144-3 |
Laser-configured ASIC |
CLEARLOGIC |
255 |
CL8820ATC144-4 |
Laser-configured ASIC |
CLEARLOGIC |
256 |
CY7C1062AV33-8BGI |
The CY7C1062AV33 is a high-performance CMOS Static RAM organized as 524,288 words by 32 bits. |
Cypress |
257 |
DBB03 |
Baseband ASIC for Dolphin Chipset |
Texas Instruments |
258 |
DS_S1T2410B01 |
bipolar integrated circuit designed as a telephone bell replacement |
Samsung Electronic |
259 |
DS_S1T2410B02 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
260 |
EDE1104AASE |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
261 |
EDE1104AASE-4A-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
262 |
EDE1104AASE-5C-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
263 |
EDE1104AASE-6E-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
264 |
EDE1108AASE |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
265 |
EDE1108AASE-4A-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
266 |
EDE1108AASE-5C-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
267 |
EDE1108AASE-6E-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
268 |
EH10B1 |
12 Amp Encapsulated Assemblies |
Microsemi |
269 |
EH10Z1 |
12 Amp Encapsulated Assemblies |
Microsemi |
270 |
EH12B1 |
12 Amp Encapsulated Assemblies |
Microsemi |
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