| No. |
Part Name |
Description |
Manufacturer |
| 241 |
AT90-1413-TB |
Digital Attenuator, 15 dB, 4-Bit, TTL Driver, DC - 4.0 GHz |
Tyco Electronics |
| 242 |
AT90-1413TR |
DC-4 GHz, digital attenuator, 15 dB, 4-bit, TTL driver |
MA-Com |
| 243 |
AT90-1413TR |
Digital Attenuator, 15 dB, 4-Bit, TTL Driver, DC - 4.0 GHz |
Tyco Electronics |
| 244 |
BCW67B |
Silicon PNP Transistor, marking DB, SOT-23 case |
Motorola |
| 245 |
BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 246 |
BF1005R |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB |
Infineon |
| 247 |
BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB |
Infineon |
| 248 |
BF1005SR |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 249 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 250 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 251 |
BF2030 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 252 |
BF2030R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 253 |
BF2030W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 254 |
BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 255 |
BF2040R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 256 |
BF2040W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 257 |
BF543 |
RF-MOSFET - VDS=15V, gfs=12mS, Gp=22dB, F=1dB |
Infineon |
| 258 |
BF998 |
RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB |
Infineon |
| 259 |
BF998R |
RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB |
Infineon |
| 260 |
BF999 |
RF-MOSFET - VDS=15V, gfs=16mS, Gp=25dB, F=1dB |
Infineon |
| 261 |
BGA416 |
Silicon MMICs - DC ... 3GHz, 23dB, 62dB Isol. Cascode Amp. in SOT143 |
Infineon |
| 262 |
BGA428 |
Silicon MMICs - 19dB LNA, 1.4...2.5GHz, NF=1.4dB, 50Ohm, SOT363 |
Infineon |
| 263 |
BGA622 |
Silicon MMICs - SiGe Ultra Low Noise Amplifier G = 15dB, NF=1.1dB, 50Ohm, SOT343 |
Infineon |
| 264 |
BGA622 |
Silicon MMICs - SiGe Ultra Low Noise Amplifier G = 15dB, NF=1.1dB, 50Ohm, SOT343 |
Infineon |
| 265 |
CA2418 |
CATV Hybrid Amplifier 5-120MHz 18dB, Return Amp |
TRW |
| 266 |
CA2800 |
Wideband Linear Amplifier 10-400MHz 17dB, 800mW |
Motorola |
| 267 |
CA2800B |
Wideband Linear Amplifier 10-400MHz 17dB, 800mW |
Motorola |
| 268 |
CA2800H |
Wideband Linear Amplifier 10-400MHz 17dB, 800mW |
Motorola |
| 269 |
CA2810B |
Wideband Linear Amplifier 10-350MHz 33dB, 800mW |
Motorola |
| 270 |
CA2810C |
CA2810C 34 dB, 10-450 MHz, 800 mWatt Wideband Linear Amplifier - Archived |
Motorola |
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