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Datasheets for DC,

Datasheets found :: 4656
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No. Part Name Description Manufacturer
241 AQS610TSX PhotoMOS relay, GU (general use) type, multi-function (1a1b MOSFET & optocoupler). Output rating load voltage 350V AC/DC, load current 100 mA. Matsushita Electric Works(Nais)
242 AQS610TSZ PhotoMOS relay, GU (general use) type, multi-function (1a1b MOSFET & optocoupler). Output rating load voltage 350V AC/DC, load current 100 mA. Matsushita Electric Works(Nais)
243 AQZ202V Power photoMOS relay with internal varistor. AC/DC type. Output rating: load voltage 17 V AC, 22 V DC, load current 3.0 A. Matsushita Electric Works(Nais)
244 AQZ204V Power photoMOS relay with internal varistor. AC/DC type. Output rating: load voltage 140 V AC, 180 V DC, load current 0.5 A. Matsushita Electric Works(Nais)
245 AQZ205V Power photoMOS relay with internal varistor. AC/DC type. Output rating: load voltage 30 V AC, 38 V DC, load current 2.0 A. Matsushita Electric Works(Nais)
246 AQZ207V Power photoMOS relay with internal varistor. AC/DC type. Output rating: load voltage 60 V AC, 85 V DC, load current 1.0 A. Matsushita Electric Works(Nais)
247 AT43USB351M Low-/full-speed configurable USB microcontroller with a 1.5/12/24 MIPS AVR, 5 function endpoints, 12-channel 10-bit ADC, PWM and 24 Kbytes of program ROM Atmel
248 AT43USB355 Full-speed USB microcontroller with a 12 MIPS AVR, 3 function endpoints, a 2-port Hub and 12-channel 10-bit ADC, PWM and 24 Kbytes of program SRAM or mask ROM Atmel
249 AT91M55800A The AT91M55800A features 8K bytes of on-chip SRAM, an External Bus Interface, a 6-channel Timer/Counter, 3 USARTs, a Master/Slave SPI Interface, a Watchdog Timer, an 8-channel 10-bit ADC, a 2-channel 10-bit DAC, a Clock Generator, Real-tim Atmel
250 BD241A NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
251 BD241A NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
252 BD241A NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
253 BD241A NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
254 BD241B NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
255 BD241B NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
256 BD241B NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
257 BD241B NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
258 BD241C NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
259 BD241C NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
260 BD241C NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
261 BD241C NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
262 BD242A PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. USHA India LTD
263 BD242A PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. USHA India LTD
264 BD242A PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. USHA India LTD
265 BD242B PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. USHA India LTD
266 BD242B PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. USHA India LTD
267 BD242B PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. USHA India LTD
268 BD242C PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. USHA India LTD
269 BD242C PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. USHA India LTD
270 BD242C PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. USHA India LTD


Datasheets found :: 4656
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