| No. |
Part Name |
Description |
Manufacturer |
| 241 |
28LV256SC-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
| 242 |
28LV256SI-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
| 243 |
28LV256SM-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
| 244 |
28LV256TC-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
| 245 |
28LV256TI-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
| 246 |
28LV256TM-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
| 247 |
2KBP04 |
Diode Rectifier Bridge Single 400V 2A 4-Pin D-44 |
New Jersey Semiconductor |
| 248 |
2KBP04M |
Diode Rectifier Bridge Single 400V 2A 4-Pin Case KBP |
New Jersey Semiconductor |
| 249 |
2N1073 |
PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 40V |
Motorola |
| 250 |
2N5442 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
| 251 |
2N5445 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
| 252 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
| 253 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 254 |
31GF4 |
Ultrafast Plastic Rectifier, Forward Current 3.0A, Reverse Voltage 400V |
Vishay |
| 255 |
3502 |
200 V three phase bridge 40-60 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 256 |
3502F |
200 V three phase bridge 40-60 A forward current,150 ns recovery time |
Voltage Multipliers |
| 257 |
3502UF |
200 V three phase bridge 40-60 A forward current,70 ns recovery time |
Voltage Multipliers |
| 258 |
3506 |
600 V three phase bridge 40-60 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 259 |
3506F |
600 V three phase bridge 40-60 A forward current,150 ns recovery time |
Voltage Multipliers |
| 260 |
3506UF |
600 V three phase bridge 40-60 A forward current,70 ns recovery time |
Voltage Multipliers |
| 261 |
3510 |
1000 V three phase bridge 40-60 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 262 |
3510F |
1000 V three phase bridge 40-60 A forward current,150 ns recovery time |
Voltage Multipliers |
| 263 |
3510UF |
1000 V three phase bridge 40-60 A forward current,70 ns recovery time |
Voltage Multipliers |
| 264 |
3EZ400D1 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 400 V. 1% tolerance. |
Motorola |
| 265 |
3EZ400D10 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 400 V. 10% tolerance. |
Motorola |
| 266 |
3EZ400D2 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 400 V. 2% tolerance. |
Motorola |
| 267 |
3EZ400D5 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 400 V. |
Motorola |
| 268 |
3N249 |
Diode Rectifier Bridge Single 400V 1.5A 4-Pin Case KBPM |
New Jersey Semiconductor |
| 269 |
3N256 |
Diode Rectifier Bridge Single 400V 2A 4-Pin Case KBPM Rail |
New Jersey Semiconductor |
| 270 |
3PM4 |
30A Single Phase Rectifier Bridge 400V |
IPRS Baneasa |
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