| No. |
Part Name |
Description |
Manufacturer |
| 241 |
HVM16 |
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes) |
Rectron Semiconductor |
| 242 |
HVM5 |
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes) |
Rectron Semiconductor |
| 243 |
HVM8 |
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes) |
Rectron Semiconductor |
| 244 |
HVP10 |
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.75 Amperes) |
Rectron Semiconductor |
| 245 |
HVP12 |
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.75 Amperes) |
Rectron Semiconductor |
| 246 |
HVP14 |
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.75 Amperes) |
Rectron Semiconductor |
| 247 |
HVP15 |
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.75 Amperes) |
Rectron Semiconductor |
| 248 |
HVP16 |
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.75 Amperes) |
Rectron Semiconductor |
| 249 |
HVP5 |
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.75 Amperes) |
Rectron Semiconductor |
| 250 |
HVP8 |
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.75 Amperes) |
Rectron Semiconductor |
| 251 |
IRF420 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 252 |
IRF422 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 253 |
IRF430 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 254 |
IRF432 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 255 |
IRF450 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
| 256 |
IRF452 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 257 |
IRF820 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 258 |
IRF822 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 259 |
IRF830 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 260 |
IRF832 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 261 |
LP5912-Q1 |
LP5912-Q1 Automotive 500-mA Ultra-Low-Noise LDO for RF and Analog Circuits 6-WSON -40 to 125 |
Texas Instruments |
| 262 |
LP5912Q0.9DRVRQ1 |
LP5912-Q1 Automotive 500-mA Ultra-Low-Noise LDO for RF and Analog Circuits 6-WSON -40 to 125 |
Texas Instruments |
| 263 |
LP5912Q0.9DRVTQ1 |
LP5912-Q1 Automotive 500-mA Ultra-Low-Noise LDO for RF and Analog Circuits 6-WSON -40 to 125 |
Texas Instruments |
| 264 |
LP5912Q1.5DRVRQ1 |
LP5912-Q1 Automotive 500-mA Ultra-Low-Noise LDO for RF and Analog Circuits 6-WSON -40 to 125 |
Texas Instruments |
| 265 |
LP5912Q1.5DRVTQ1 |
LP5912-Q1 Automotive 500-mA Ultra-Low-Noise LDO for RF and Analog Circuits 6-WSON -40 to 125 |
Texas Instruments |
| 266 |
LP5912Q1.8DRVRQ1 |
LP5912-Q1 Automotive 500-mA Ultra-Low-Noise LDO for RF and Analog Circuits 6-WSON -40 to 125 |
Texas Instruments |
| 267 |
LP5912Q1.8DRVTQ1 |
LP5912-Q1 Automotive 500-mA Ultra-Low-Noise LDO for RF and Analog Circuits 6-WSON -40 to 125 |
Texas Instruments |
| 268 |
LP5912Q2.8DRVRQ1 |
LP5912-Q1 Automotive 500-mA Ultra-Low-Noise LDO for RF and Analog Circuits 6-WSON -40 to 125 |
Texas Instruments |
| 269 |
LP5912Q2.8DRVTQ1 |
LP5912-Q1 Automotive 500-mA Ultra-Low-Noise LDO for RF and Analog Circuits 6-WSON -40 to 125 |
Texas Instruments |
| 270 |
LP5912Q3.3DRVRQ1 |
LP5912-Q1 Automotive 500-mA Ultra-Low-Noise LDO for RF and Analog Circuits 6-WSON -40 to 125 |
Texas Instruments |
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