| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2N6730 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Diodes |
| 242 |
2N6730 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Zetex Semiconductors |
| 243 |
2N6731 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
Diodes |
| 244 |
2N6731 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
Zetex Semiconductors |
| 245 |
2N6732 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
Diodes |
| 246 |
2N6732 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
Zetex Semiconductors |
| 247 |
2N6740 |
100.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 10 - 40 hFE. |
Continental Device India Limited |
| 248 |
2N696 |
Silicon n-p-n medium power transistor |
Mullard |
| 249 |
2N697 |
Silicon n-p-n medium power transistor |
Mullard |
| 250 |
2N7000 |
Medium Power MOSFETS |
Micro Commercial Components |
| 251 |
2SA1160 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 252 |
2SA1224 |
PNP medium power microwave transistor (This datasheet of the NE90115 is also the datasheet of 2SA1224, see the Electrical Characteristics table) |
NEC |
| 253 |
2SA1242 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 254 |
2SA1300 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 255 |
2SA1430 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 256 |
2SA1431 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 257 |
2SA1515 |
Medium Power Transistor |
ROHM |
| 258 |
2SA1727 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 259 |
2SA1759 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 260 |
2SA1776 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 261 |
2SA1797 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 262 |
2SA1802 |
Transistor Silicon PNP Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 263 |
2SA1812 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 264 |
2SA1834 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 265 |
2SA1862 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 266 |
2SA1893 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 267 |
2SA1900 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 268 |
2SA1952 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 269 |
2SA1979 |
PNP Silicon Transistor (Medium power amplifier) |
AUK Corp |
| 270 |
2SA1979M |
PNP Silicon Transistor (Medium power amplifier) |
AUK Corp |
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