| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2N3055/6 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 242 |
2N3055/7 |
NPN Low frequency, power silicon transistor |
IPRS Baneasa |
| 243 |
2N3055/7 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 244 |
2N3055/8 |
NPN Low frequency, power silicon transistor |
IPRS Baneasa |
| 245 |
2N3055/8 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 246 |
2N3055/9 |
NPN Low frequency, power silicon transistor |
IPRS Baneasa |
| 247 |
2N3055/9 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 248 |
2N3055H |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 249 |
2N3055W |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 250 |
2N319 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 251 |
2N320 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 252 |
2N321 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 253 |
2N3210 |
NPN silicon high frequency switching transistor for industrial service |
Motorola |
| 254 |
2N3211 |
NPN silicon high frequency switching transistor for industrial service |
Motorola |
| 255 |
2N3262 |
Triple-diffused planar transistor of the silicon NPN type intended for high-voltage, high-frequency pulse ampliers |
RCA Solid State |
| 256 |
2N3279 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 257 |
2N3280 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 258 |
2N3281 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 259 |
2N3282 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 260 |
2N3375 |
Silicon NPN epitaxial high frequency power transistor for VHF and UHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 261 |
2N3375 |
High Frequency NPN transistor |
CCSIT-CE |
| 262 |
2N3423 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
| 263 |
2N3424 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
| 264 |
2N3425 |
Dual NPN silicon transistor designed for use as a high-frequency sense amplifier |
Motorola |
| 265 |
2N3441 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 266 |
2N3442 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 267 |
2N3442 |
Low frequency transistor |
mble |
| 268 |
2N3442 |
Low frequency transistor |
mble |
| 269 |
2N3553 |
Silicon high frequency epitaxial planar transistor for VHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 270 |
2N3553 |
High Frequency NPN transistor |
CCSIT-CE |
| | | |
