No. |
Part Name |
Description |
Manufacturer |
241 |
KM418RD2AD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
242 |
KM418RD2C |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
243 |
KM418RD2D |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
244 |
KM418RD32AC |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
245 |
KM418RD32AD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
246 |
KM418RD32C |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
247 |
KM418RD32D |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
248 |
KM418RD4AC |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
249 |
KM418RD4AD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
250 |
KM418RD4C |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
251 |
KM418RD4D |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
252 |
KM418RD8AC(D)-RG60 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
253 |
KM418RD8AC(D)-RK70 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
254 |
KM418RD8AC(D)-RK80 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
255 |
KM418RD8AC-RG60 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
256 |
KM418RD8AC-RK70 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
257 |
KM418RD8AC-RK80 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
258 |
KM418RD8AD-RG60 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
259 |
KM418RD8AD-RK70 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
260 |
KM418RD8AD-RK80 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
261 |
KM418RD8C |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
262 |
KM418RD8D |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
263 |
L159M1 |
1 differential amp. and 3 independent NPN transistors array |
SGS-ATES |
264 |
L159M3 |
1 differential amp. and 3 independent NPN transistors array |
SGS-ATES |
265 |
L5956 |
Voltage regulator with ignition comparator, reset, overcurrent protection and 3.3V regulator with independent enable |
ST Microelectronics |
266 |
L5956PD |
Voltage regulator with ignition comparator, reset, overcurrent protection and 3.3V regulator with independent enable |
ST Microelectronics |
267 |
L5956PDTR |
Voltage regulator with ignition comparator, reset, overcurrent protection and 3.3V regulator with independent enable |
ST Microelectronics |
268 |
L5957 |
Voltage regulator with ignition comparator, reset, overcurrent protection, 5V regulator (CAN) with independent enable |
ST Microelectronics |
269 |
L5957PD |
Voltage regulator with ignition comparator, reset, overcurrent protection, 5V regulator (CAN) with independent enable |
ST Microelectronics |
270 |
L5957PDTR |
Voltage regulator with ignition comparator, reset, overcurrent protection, 5V regulator (CAN) with independent enable |
ST Microelectronics |
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