| No. |
Part Name |
Description |
Manufacturer |
| 241 |
KM418RD4AC |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 242 |
KM418RD4AD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 243 |
KM418RD4C |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 244 |
KM418RD4D |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 245 |
KM418RD8AC(D)-RG60 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 246 |
KM418RD8AC(D)-RK70 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 247 |
KM418RD8AC(D)-RK80 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 248 |
KM418RD8AC-RG60 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
| 249 |
KM418RD8AC-RK70 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
| 250 |
KM418RD8AC-RK80 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
| 251 |
KM418RD8AD-RG60 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
| 252 |
KM418RD8AD-RK70 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
| 253 |
KM418RD8AD-RK80 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
| 254 |
KM418RD8C |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 255 |
KM418RD8D |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 256 |
L159M1 |
1 differential amp. and 3 independent NPN transistors array |
SGS-ATES |
| 257 |
L159M3 |
1 differential amp. and 3 independent NPN transistors array |
SGS-ATES |
| 258 |
L5956 |
Voltage regulator with ignition comparator, reset, overcurrent protection and 3.3V regulator with independent enable |
ST Microelectronics |
| 259 |
L5956PD |
Voltage regulator with ignition comparator, reset, overcurrent protection and 3.3V regulator with independent enable |
ST Microelectronics |
| 260 |
L5956PDTR |
Voltage regulator with ignition comparator, reset, overcurrent protection and 3.3V regulator with independent enable |
ST Microelectronics |
| 261 |
L5957 |
Voltage regulator with ignition comparator, reset, overcurrent protection, 5V regulator (CAN) with independent enable |
ST Microelectronics |
| 262 |
L5957PD |
Voltage regulator with ignition comparator, reset, overcurrent protection, 5V regulator (CAN) with independent enable |
ST Microelectronics |
| 263 |
L5957PDTR |
Voltage regulator with ignition comparator, reset, overcurrent protection, 5V regulator (CAN) with independent enable |
ST Microelectronics |
| 264 |
LC508 |
Class A Amplifier with 3 Independent Gain Blocks |
Gennum Corporation |
| 265 |
LMK03328 |
Ultra-Low Jitter Clock Generator Family With Two Independent PLLs 48-WQFN -40 to 85 |
Texas Instruments |
| 266 |
LMK03328RHSR |
Ultra-Low Jitter Clock Generator Family With Two Independent PLLs 48-WQFN -40 to 85 |
Texas Instruments |
| 267 |
LMK03328RHST |
Ultra-Low Jitter Clock Generator Family With Two Independent PLLs 48-WQFN -40 to 85 |
Texas Instruments |
| 268 |
LMV712 |
Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown |
National Semiconductor |
| 269 |
LMV712 |
Low-Power Low-Noise High-Output RRIO Dual Operational Amplifier With Independent Shutdown 10-VSSOP -40 to 85 |
Texas Instruments |
| 270 |
LMV712 MDC |
Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown |
National Semiconductor |
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