| No. |
Part Name |
Description |
Manufacturer |
| 241 |
AF139 |
Germanium PNP MESA Transistor |
TUNGSRAM |
| 242 |
AF200 |
Germanium PNP MESA Transistor |
TUNGSRAM |
| 243 |
AF201 |
Germanium PNP MESA Transistor |
TUNGSRAM |
| 244 |
AF202 |
Germanium PNP MESA Transistor |
TUNGSRAM |
| 245 |
AFY12 |
PNP MESA transistor |
Siemens |
| 246 |
AFY16 |
PNP MESA Transistor |
Siemens |
| 247 |
AFY18 |
PNP MESA Transistor |
Siemens |
| 248 |
AFY18C |
PNP MESA Transistor |
Siemens |
| 249 |
AFY18D |
PNP MESA Transistor |
Siemens |
| 250 |
AFY18E |
PNP MESA Transistor |
Siemens |
| 251 |
AFY37 |
PNP MESA Transistor |
Siemens |
| 252 |
AFY39 |
PNP MESA Transistor |
Siemens |
| 253 |
AFY42 |
PNP MESA Transistor |
Siemens |
| 254 |
BBY33BB-2 |
Silicon Tuning Varactor (Tuning varactor in passivated Mesa technology epitaxial design) |
Siemens |
| 255 |
BD234 |
Silicon PNP epitaxial BASE MESA transistor |
TOSHIBA |
| 256 |
BD236 |
Silicon PNP epitaxial BASE MESA transistor |
TOSHIBA |
| 257 |
BD238 |
Silicon PNP epitaxial BASE MESA transistor |
TOSHIBA |
| 258 |
CAY10 |
Gallium arsenide diode, diffused mesa type, for use in microwave parametric amplifiers, frequency multipliers and switches |
Mullard |
| 259 |
GF145 |
Germanium PNP mesa transistor for pre-, mixer and oscillator stages up to 860MHz |
RFT |
| 260 |
GF145 |
Germanium PNP MESA Transistor, mixing and oscillator stages up to 860MHz |
RFT |
| 261 |
GF145 |
Germanium PNP MESA Transistor |
RFT |
| 262 |
GF146 |
Germanium PNP mesa transistor for pre-, mixer and oscillator stages, up to 260MHz |
RFT |
| 263 |
GF147 |
Germanium PNP MESA Transistor, for pre-mixing and oscillator stages up to 900MHz, collector isolated from the case |
RFT |
| 264 |
JAN2N3127 |
PNP germanium mesa transistor designed for industrial and commercial VHF/UHF amplifier applications |
Motorola |
| 265 |
JAN2N559-1 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 266 |
JAN2N559-2 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 267 |
JAN2N559-3 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 268 |
MA2DF22 |
Silicon mesa type |
Panasonic |
| 269 |
MA2DF31 |
Silicon mesa type |
Panasonic |
| 270 |
MA2DF60 |
Silicon Mesa type |
Panasonic |
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