No. |
Part Name |
Description |
Manufacturer |
241 |
2SA1246 |
High-VEBO, AF Amp Applications |
SANYO |
242 |
2SA1252 |
High VEBO, AF Amp Applications |
SANYO |
243 |
2SA1253 |
High-hFE, AF Amp Applications |
SANYO |
244 |
2SA1318 |
AF Amp Applications |
SANYO |
245 |
2SA1318R |
PNP transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
246 |
2SA1318S |
PNP transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
247 |
2SA1318T |
PNP transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
248 |
2SA1318U |
PNP transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
249 |
2SA1391 |
Low-Noise AF Amp Applications |
SANYO |
250 |
2SA1392 |
PNP/NPN Epitaxial Planar Silicon Transistors AF Amp Applications |
SANYO |
251 |
2SA1435 |
PNP Epitaxial Planar Silicon Transistor High hFE, AF Amplifier Applications |
SANYO |
252 |
2SA1436 |
PNP Epitaxial Planar Silicon Transistor High hFE, AF Amplifier Applications |
SANYO |
253 |
2SA1437 |
PNP Epitaxial Planar Silicon Transistor High-hFE, AF Amplifier Applications |
SANYO |
254 |
2SA15 |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
255 |
2SA1562 |
PNP Epitaxial Planar Silicon Transistors High-hFE AF Amplifier Applications |
SANYO |
256 |
2SA15H |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
257 |
2SA1815 |
PNP Epitaxial Planar Silicon Transistor FM, RF, MIX, IF Amplifier, High-Frequency General-Purpose Amplifier Applications |
SANYO |
258 |
2SA1857 |
PNP Epitaxial Planar Silicon Transistor FM, RF, MIX, IF Amplifier High-Frequency General-Purpose Amplifier Applications |
SANYO |
259 |
2SA235 |
Germanium Transistor PNP MESA, intended for use in FM RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
260 |
2SA3331R |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
261 |
2SA3331S |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
262 |
2SA3331T |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
263 |
2SA3331U |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
264 |
2SA3331V |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
265 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
266 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
267 |
2SA355 |
Germanium PNP Transistor Drift Junction, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
268 |
2SA548H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching, RF Amplifier |
Hitachi Semiconductor |
269 |
2SA733P |
PNP transistor for use in driver of AF amplifier, 60V, 0.1A |
NEC |
270 |
2SA733P |
PNP transistor for use in driver of AF amplifier, 60V, 0.1A |
NEC |
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