| No. |
Part Name |
Description |
Manufacturer |
| 241 |
IRF350 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 242 |
IRF350-353 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
| 243 |
IRF351 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
| 244 |
IRF351 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 15A. |
General Electric Solid State |
| 245 |
IRF351 |
13.0A and 15.0A, 350 and 400V, 0.300 and 0.400 ohm, Avalanche Rated*, N-Channel Power MOSFET FN1826.2 |
Intersil |
| 246 |
IRF351 |
Trans MOSFET N-CH 350V 13A 3-Pin(2+Tab) TO-204AA |
New Jersey Semiconductor |
| 247 |
IRF351 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 248 |
IRF3515L |
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 249 |
IRF3515LPBF |
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 250 |
IRF3515S |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 251 |
IRF3515SPBF |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 252 |
IRF3515STRL |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 253 |
IRF3515STRLPBF |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 254 |
IRF3515STRR |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 255 |
IRF352 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
| 256 |
IRF352 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
| 257 |
IRF352 |
13.0A and 15.0A, 350 and 400V, 0.300 and 0.400 ohm, Avalanche Rated*, N-Channel Power MOSFET FN1826.2 |
Intersil |
| 258 |
IRF352 |
Trans MOSFET 400V 13A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 259 |
IRF352 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 260 |
IRF3521 |
Trans MOSFET 400V 13A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 261 |
IRF352R |
Trans MOSFET 400V 13A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 262 |
IRF353 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
| 263 |
IRF353 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
| 264 |
IRF353 |
13.0A and 15.0A, 350 and 400V, 0.300 and 0.400 ohm, Avalanche Rated*, N-Channel Power MOSFET FN1826.2 |
Intersil |
| 265 |
IRF353 |
Trans MOSFET N-CH 350V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 266 |
IRF353 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 267 |
IRF3546M |
60A Dual Integrated Power Block. Two Pairs of High Performance Control and Synchronous MOSFETs. 25V Quad N-Channel HEXFET Power MOSFET |
International Rectifier |
| 268 |
IRF3546MTRPBF |
60A Dual Integrated Power Block. Two Pairs of High Performance Control and Synchronous MOSFETs. 25V Quad N-Channel HEXFET Power MOSFET |
International Rectifier |
| 269 |
IRFK2F350 |
400V HALF BRDG HEXFET Power MOSFET in a TO-240AA package |
International Rectifier |
| 270 |
IRFK3F350 |
Isolated Base Power HEX-pak Assembly - Half Bridge Configuration |
International Rectifier |
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