| No. |
Part Name |
Description |
Manufacturer |
| 241 |
IRF710STRL |
400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 242 |
IRF710STRR |
400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 243 |
IRF711 |
N-Channel Power MOSFETs/ 2.25A/ 350-400V |
Fairchild Semiconductor |
| 244 |
IRF711 |
Trans MOSFET N-CH 20V 3.5A 8-Pin SOIC T/R |
New Jersey Semiconductor |
| 245 |
IRF711 |
N-Channel Power MOSFET |
Samsung Electronic |
| 246 |
IRF711 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 1.5A |
Siliconix |
| 247 |
IRF712 |
N-Channel Power MOSFETs/ 2.25A/ 350-400V |
Fairchild Semiconductor |
| 248 |
IRF712 |
Trans MOSFET N-CH 20V 3.5A 8-Pin SOIC T/R |
New Jersey Semiconductor |
| 249 |
IRF712 |
N-Channel Power MOSFET |
Samsung Electronic |
| 250 |
IRF712 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 1.5A |
Siliconix |
| 251 |
IRF713 |
N-Channel Power MOSFETs/ 2.25A/ 350-400V |
Fairchild Semiconductor |
| 252 |
IRF713 |
Trans MOSFET N-CH 20V 3.5A 8-Pin SOIC T/R |
New Jersey Semiconductor |
| 253 |
IRF713 |
N-Channel Power MOSFET |
Samsung Electronic |
| 254 |
IRF713 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 1.5A |
Siliconix |
| 255 |
IRF7171M |
100V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package |
International Rectifier |
| 256 |
IRF7171MTRPBF |
100V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package |
International Rectifier |
| 257 |
IRHF7110 |
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package |
International Rectifier |
| 258 |
IRHF7110SCS |
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package |
International Rectifier |
| 259 |
IRHF7130 |
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package |
International Rectifier |
| 260 |
KF2002-GF71A |
Thermal Printheads > For ECR > KF2002-GF70 Series, KF1502-GT10 Series |
ROHM |
| 261 |
LC87F71C8A |
8-bit microcontrollers (LC87 series) |
SANYO |
| 262 |
MBRF7100 |
Rectifier: Schottky |
Taiwan Semiconductor |
| 263 |
MBRF7150 |
Discrete Devices -Diode-Schottky |
Taiwan Semiconductor |
| 264 |
MGF7124A |
1.9GHz BAND AMPLIFIER MMIC |
Mitsubishi Electric Corporation |
| 265 |
MGF7168C |
UHF BAND GaAs POWER AMPLIFIER |
Mitsubishi Electric Corporation |
| 266 |
MGF7169C |
UHF BAND GaAs POWER AMPLIFIER |
Mitsubishi Electric Corporation |
| 267 |
MGF7170AC |
UHF BAND GaAs POWER AMPLIFIER |
Mitsubishi Electric Corporation |
| 268 |
MGF7170C |
UHF band GaAs power amplifier |
Mitsubishi Electric Corporation |
| 269 |
MGF7175C |
3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER |
Mitsubishi Electric Corporation |
| 270 |
MGF7176C |
3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER |
Mitsubishi Electric Corporation |
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