| No. |
Part Name |
Description |
Manufacturer |
| 241 |
SG7918IG-883B |
Positive Voltage Regulators (non-LDO) |
Microsemi |
| 242 |
SG7920AIG-883B |
Positive Voltage Regulators (non-LDO) |
Microsemi |
| 243 |
SG7920IG-883B |
Positive Voltage Regulators (non-LDO) |
Microsemi |
| 244 |
SGR117AIG-883B |
Positive Voltage Regulators (non-LDO) |
Microsemi |
| 245 |
TG-8 |
HIGH ENERGY SPARK GAP DEVICES |
Clare Inc |
| 246 |
TG-82 |
HIGH ENERGY SPARK GAP DEVICES |
Clare Inc |
| 247 |
TG-83 |
HIGH ENERGY SPARK GAP DEVICES |
Clare Inc |
| 248 |
TG-84 |
HIGH ENERGY SPARK GAP DEVICES |
Clare Inc |
| 249 |
TG-85 |
HIGH ENERGY SPARK GAP DEVICES |
Clare Inc |
| 250 |
TG-86 |
HIGH ENERGY SPARK GAP DEVICES |
Clare Inc |
| 251 |
TG-87 |
HIGH ENERGY SPARK GAP DEVICES |
Clare Inc |
| 252 |
TG-88 |
HIGH ENERGY SPARK GAP DEVICES |
Clare Inc |
| 253 |
TG-89 |
HIGH ENERGY SPARK GAP DEVICES |
Clare Inc |
| 254 |
THM321000SG-80 |
1/048/576 WORDS x 32 BIT DYNAMIC RAM MODULE |
TOSHIBA |
| 255 |
THM321020SG-80 |
1/048/576 WORDS x 32 BIT DYNAMIC RAM MODULE |
TOSHIBA |
| 256 |
THM322020SG-80 |
2/097/152 WORDS x 32 BIT DYNAMIC RAM MODULE |
TOSHIBA |
| 257 |
THM361020SG-80 |
1/048/576 WORDS x 36 BIT DYNAMIC RAM MODULE |
TOSHIBA |
| 258 |
THM362020SG-80 |
2/097/152 WORDS x 36BIT DYNAMIC RAM MODULE |
TOSHIBA |
| 259 |
THM401020SG-80 |
1/048/576 WORDSx40 BIT DYNAMIC RAM MODULE |
TOSHIBA |
| 260 |
THM402020SG-80 |
2/097/152 WORDSx40 BIT DYNAMIC RAM MODULE |
TOSHIBA |
| 261 |
THMY641661BEG-80 |
16/777/216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE |
TOSHIBA |
| 262 |
THMY644071BEG-80 |
4,194,304-words by 64-BITS synchronous DRAM module |
TOSHIBA |
| 263 |
THMY648071BEG-80 |
8/388/608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE |
TOSHIBA |
| 264 |
THMY721661BEG-80 |
16/777/216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE |
TOSHIBA |
| 265 |
TTVG-800 |
Microwave Garnets Calcium Vanadium Doped |
Skyworks Solutions |
| 266 |
UPD70108G-8 |
16-bit high-performance CMOS microprocessor, 8MHz |
NEC |
| 267 |
UPD71055G-8 |
Parallel Interface Unit |
NEC |
| | | |
