| No. |
Part Name |
Description |
Manufacturer |
| 241 |
MAX6744XKWGD3-T |
Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 242 |
MAX6744XKZGD3+ |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 243 |
MAX6744XKZGD3+T |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 244 |
MAX6744XKZGD3-T |
Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 245 |
MAX6760TATGD3+ |
Low-Power, Single/Dual-Voltage Window Detectors |
MAXIM - Dallas Semiconductor |
| 246 |
MAX6760TATGD3+T |
Low-Power, Single/Dual-Voltage Window Detectors |
MAXIM - Dallas Semiconductor |
| 247 |
NTGD3133P |
Power MOSFET -20 V, -2.5 A, P-Channel, TSOP-6 Dual |
ON Semiconductor |
| 248 |
NTGD3147F |
−20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 |
ON Semiconductor |
| 249 |
NTGD3148N |
NTGD3148N |
ON Semiconductor |
| 250 |
NTGD3148N |
NTGD3148N |
ON Semiconductor |
| 251 |
NTGD3149C |
NTGD3149C |
ON Semiconductor |
| 252 |
NTGD3149C |
NTGD3149C |
ON Semiconductor |
| 253 |
NTLGD3502N |
Power MOSFET, 20 V, Dual N-Channel |
ON Semiconductor |
| 254 |
OPA820SKGD3 |
High Temp Unity-Gain Stable, Low Noise, Voltage-Feedback Operational Amplifier . 0-XCEPT -55 to 210 |
Texas Instruments |
| 255 |
PMGD370XN |
Dual N-channel TrechMOS extremely low level FET |
NXP Semiconductors |
| 256 |
PMGD370XN |
PMGD370XN; Dual N-channel uTrenchmos (tm) extremely low level FET |
Philips |
| 257 |
PMGD370XN |
PMGD370XN; Dual N-channel uTrenchmos (tm) extremely low level FET |
Philips |
| 258 |
PMGD370XN |
Dual N-channel uTrenchmos (tm) extremely low level FET |
Philips |
| 259 |
SM28VLT32SKGD3 |
32-Mbit High-Temp Flash Memory with Serial Peripheral Interface (SPI) Bus 0-XCEPT -55 to 210 |
Texas Instruments |
| 260 |
SN65HVD1040SKGD3 |
High Temp Industrial CAN Transceiver with Ultra Low Power Sleep mode and Remote Bus Wake-up 0-XCEPT -55 to 210 |
Texas Instruments |
| 261 |
STEVAL-IHM032V1 |
150 W inverter featuring the L639x and STGD3HF60HD for 1-shunt based sinusoidal vector control and trapezoidal scalar control |
ST Microelectronics |
| 262 |
STGD3HF60HD |
4.5 A, 600 V very fast IGBT with Ultrafast diode |
ST Microelectronics |
| 263 |
STGD3NB60F |
N-CHANNEL 3A - 600V TO-220/TO-220FP/DPAK/D2PAK POWERMESH IGBT |
ST Microelectronics |
| 264 |
STGD3NB60FT4 |
N-CHANNEL 3A - 600V TO-220/TO-220FP/DPAK/D2PAK POWERMESH IGBT |
ST Microelectronics |
| 265 |
STGD3NB60H |
N-CHANNEL 3A - 600V TO-252 PowerMESH] IGBT |
SGS Thomson Microelectronics |
| 266 |
STGD3NB60H |
N-CHANNEL 3A - 600V DPAK POWERMESH IGBT |
SGS Thomson Microelectronics |
| 267 |
STGD3NB60H |
N-CHANNEL 3A - 600V DPAK POWERMESH IGBT |
ST Microelectronics |
| 268 |
STGD3NB60HD |
N-CHANNEL 3A 600V DPAK POWERMESH IGBT |
ST Microelectronics |
| 269 |
STGD3NB60HDT4 |
N-CHANNEL 3A 600V DPAK POWERMESH IGBT |
ST Microelectronics |
| 270 |
STGD3NB60HT4 |
N-CHANNEL 3A 600V DPAK POWERMESH IGBT |
ST Microelectronics |
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