| No. |
Part Name |
Description |
Manufacturer |
| 241 |
1S1921E |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1000V |
Hitachi Semiconductor |
| 242 |
1S1921F |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1200V |
Hitachi Semiconductor |
| 243 |
1SS97 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 244 |
1SS98 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 245 |
1SS99 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 246 |
2001 |
1 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
| 247 |
2001 |
1 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
| 248 |
2001 |
2GHz 1W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 249 |
2003 |
3 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
| 250 |
2003 |
3 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
| 251 |
2003 |
2GHz 3W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 252 |
2005 |
5 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
| 253 |
2005 |
5 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
| 254 |
2005 |
2GHz 5W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 255 |
2010 |
10 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
| 256 |
2010 |
10 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
| 257 |
2010 |
2GHz 10W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 258 |
2015M |
15 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
| 259 |
2015M |
15 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
| 260 |
2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor |
GHz Technology |
| 261 |
2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor |
GHz Technology |
| 262 |
2023-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 263 |
2023-16 |
2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 264 |
2023-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 265 |
2023-6 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 266 |
2023-6 |
2.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 267 |
2028-771196-000 |
Synchronous rectification with inhibit, 0.7 A, 1.7 MHz adjustable, step-down switching regulator |
ST Microelectronics |
| 268 |
20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 269 |
20L15 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 270 |
20MT120UF |
1200V UltraFast 10-30 kHz Full-Bridge IGBT in a MTP package |
International Rectifier |
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