| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2SD635 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS |
TOSHIBA |
| 242 |
2SD693 |
Si NPN triple diffused mesa. High power switching. |
Panasonic |
| 243 |
2SD698 |
Silicon NPN triple diffused MESA darlington high power switching transistor |
TOSHIBA |
| 244 |
300U10A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 245 |
300U10AR |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 246 |
300U160A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 247 |
300U160AR |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 248 |
300U200A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 249 |
300U200AR |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 250 |
300U20A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 251 |
300U20AR |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 252 |
300U30A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 253 |
300U30AR |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 254 |
300U40A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 255 |
300U40AR |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 256 |
300U60A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 257 |
300U60AR |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 258 |
3135-14 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 259 |
3135-25 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 260 |
3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 261 |
3135-35 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 262 |
3135-45 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 263 |
3135-7 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 264 |
400U120D |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 265 |
400U120DR |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 266 |
400U160D |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 267 |
400U160DR |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 268 |
400U80D |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 269 |
400U80DR |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 270 |
40HF10 |
High Power Standard Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
| | | |
