| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2N665 |
PNP germanium power transistor in military and industrial equipment |
Motorola |
| 242 |
3N200 |
MOS Field-Effect Transistor N-Channel Depletion Type, for Military and Industrial Applications up to 500MHz |
RCA Solid State |
| 243 |
42051-125 |
12V DC; 5A; fixed three terminal negative voltage regulator. Military and Hi Rel industrial applications where hermetically sealed product is required |
Micropac Industries |
| 244 |
42051-145 |
14V DC; 5A; fixed three terminal negative voltage regulator. Military and Hi Rel industrial applications where hermetically sealed product is required |
Micropac Industries |
| 245 |
42051-155 |
15V DC; 5A; fixed three terminal negative voltage regulator. Military and Hi Rel industrial applications where hermetically sealed product is required |
Micropac Industries |
| 246 |
42051-165 |
16V DC; 5A; fixed three terminal negative voltage regulator. Military and Hi Rel industrial applications where hermetically sealed product is required |
Micropac Industries |
| 247 |
4E100M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 248 |
4E100M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 249 |
4E200M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 250 |
4E200M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 251 |
4E20M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 252 |
4E20M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 253 |
4E30M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 254 |
4E30M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 255 |
4E40M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 256 |
4E40M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 257 |
4E50M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 258 |
4E50M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 259 |
4E80M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 260 |
4E80M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 261 |
54ACQ244PMQB |
Quiet series octal buffer/line driver with TRI-STATE outputs. Military grade device with environmental and burn-in processing chipped in tubes. |
National Semiconductor |
| 262 |
54ACQ244QMQB |
Quiet series octal buffer/line driver with TRI-STATE outputs. Military grade device with environmental and burn-in processing chipped in tubes. |
National Semiconductor |
| 263 |
54ACQ244SMQB |
Quiet series octal buffer/line driver with TRI-STATE outputs. Military grade device with environmental and burn-in processing chipped in tubes. |
National Semiconductor |
| 264 |
54ACTQ244DMQB |
Quiet series octal buffer/line driver with TRI-STATE outputs. Military grade device with environmental and burn-in processing chipped in tubes. |
National Semiconductor |
| 265 |
54ACTQ244FMQB |
Quiet series octal buffer/line driver with TRI-STATE outputs. Military grade device with environmental and burn-in processing chipped in tubes. |
National Semiconductor |
| 266 |
54ACTQ244LMQB |
Quiet series octal buffer/line driver with TRI-STATE outputs. Military grade device with environmental and burn-in processing chipped in tubes. |
National Semiconductor |
| 267 |
54ACTQ244PMQB |
Quiet series octal buffer/line driver with TRI-STATE outputs. Military grade device with environmental and burn-in processing chipped in tubes. |
National Semiconductor |
| 268 |
54ACTQ244QMQB |
Quiet series octal buffer/line driver with TRI-STATE outputs. Military grade device with environmental and burn-in processing chipped in tubes. |
National Semiconductor |
| 269 |
54ACTQ244SMQB |
Quiet series octal buffer/line driver with TRI-STATE outputs. Military grade device with environmental and burn-in processing chipped in tubes. |
National Semiconductor |
| 270 |
54F2620DMQB |
Inverting octal bus transceiver with 25 Ohm series resistors in the outputs. Military grade device with environmental and burn-in processing shipped in tubes. |
National Semiconductor |
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