| No. |
Part Name |
Description |
Manufacturer |
| 241 |
BFS483 |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFR183W) for low noise, high gain broadband amplifiers |
Infineon |
| 242 |
BFS483 |
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) |
Siemens |
| 243 |
BFX55 |
NPN SILICON TRANSISTOR FOR VHF OUTPUT STAGES IN BROADBAND AMPLIFIERS |
Siemens |
| 244 |
BFY193 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.) |
Siemens |
| 245 |
BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 246 |
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 247 |
BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 248 |
BGA420 |
Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 ��-gain block Unconditionally stable) |
Siemens |
| 249 |
BGA427 |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable) |
Siemens |
| 250 |
BUD42D |
High Speed, High Gain Bipolar NPN Transistor |
ON Semiconductor |
| 251 |
BUD42D-001 |
High Speed, High Gain Bipolar NPN Transistor |
ON Semiconductor |
| 252 |
BUD42D-D |
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
| 253 |
BUD42DT4 |
High Speed/ High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability |
ON Semiconductor |
| 254 |
BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
| 255 |
BUD44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS |
ON Semiconductor |
| 256 |
BUL42D |
High Speed, High Gain Bipolar NPN Transistor |
ON Semiconductor |
| 257 |
BUL42D-D |
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
| 258 |
BUL44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 259 |
BUL45D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 260 |
CGY50 |
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 �� gain block) |
Siemens |
| 261 |
CHA2098B |
20-40GHz High Gain Buffer Amplifier |
United Monolithic Semiconductors |
| 262 |
CHA2098B99F/00 |
20-40GHz High Gain Buffer Amplifier |
United Monolithic Semiconductors |
| 263 |
CHA2098RBF |
20-33GHz High Gain Buffer Amplifier |
United Monolithic Semiconductors |
| 264 |
CHA2098RBF/24 |
20-33GHz High Gain Buffer Amplifier |
United Monolithic Semiconductors |
| 265 |
CLC407 |
Low Cost, Low Power, 110 MHz Programmable Gain Buffer with Disable |
National Semiconductor |
| 266 |
CLC407AJ |
Low-Cost/ Low-Power Programmable Gain Buffer with Disable |
National Semiconductor |
| 267 |
CLC407AMC |
Low Cost, Low Power, 110 MHz Programmable Gain Buffer with Disable |
National Semiconductor |
| 268 |
CLC407MDC |
Low Cost, Low Power, 110 MHz Programmable Gain Buffer with Disable |
National Semiconductor |
| 269 |
CLC417 |
Dual, Low Cost, Low Power, Programmable Gain Buffer |
National Semiconductor |
| 270 |
CLC417AJE |
Dual Low-Power, Programmable Gain Buffer |
National Semiconductor |
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