| No. |
Part Name |
Description |
Manufacturer |
| 241 |
BAX67 |
Silicon diode assemblies |
SGS-ATES |
| 242 |
BAX68 |
Silicon diode assemblies |
SGS-ATES |
| 243 |
BAX69 |
Silicon diode assemblies |
SGS-ATES |
| 244 |
BAX70 |
Silicon diode assemblies |
SGS-ATES |
| 245 |
BAX71 |
Silicon diode assemblies |
SGS-ATES |
| 246 |
BAX72 |
Silicon diode assemblies |
SGS-ATES |
| 247 |
BAX73 |
Silicon diode assemblies |
SGS-ATES |
| 248 |
BGX50A |
General Purpose Diodes - Silicon Switching Diode Array with bridge configuration |
Infineon |
| 249 |
BGX50A |
Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip) |
Siemens |
| 250 |
BSM150GB120DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 251 |
BSM150GB170DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 252 |
BSM300GA120DN2E3166 |
IGBT Power Module (Single switch Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 253 |
BSM300GA170DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 254 |
BSM35GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area) |
Siemens |
| 255 |
BUD44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS |
ON Semiconductor |
| 256 |
BUL44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 257 |
BUL45D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 258 |
C4675 |
16 x 16 element photodiode array detector |
Hamamatsu Corporation |
| 259 |
C4675-102 |
16 x 16 element photodiode array detector |
Hamamatsu Corporation |
| 260 |
C4675-103 |
16 x 16 element photodiode array detector |
Hamamatsu Corporation |
| 261 |
C4675-302 |
16 x 16 element photodiode array detector |
Hamamatsu Corporation |
| 262 |
C4890 |
Pin photodiode amplifier |
Hamamatsu Corporation |
| 263 |
C67070-A2007-A70 |
IGBT Power Module (Single switch Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 264 |
C67070-A2111-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area) |
Siemens |
| 265 |
C67070-A2709-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 266 |
C67070-A2710-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 267 |
C67076-A2112-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 268 |
C9004 |
Driver circuit for Si photodiode array |
Hamamatsu Corporation |
| 269 |
C9118 |
Driver circuit for photodiode array with amplifier |
Hamamatsu Corporation |
| 270 |
C9118-01 |
Driver circuit for photodiode array with amplifier |
Hamamatsu Corporation |
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