| No. |
Part Name |
Description |
Manufacturer |
| 241 |
1N5391G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 242 |
1N5392G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 243 |
1N5393G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 244 |
1N5394G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 245 |
1N5395G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 246 |
1N5396G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 247 |
1N5397G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 248 |
1N5398G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 249 |
1N5399G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 250 |
1N540 |
Diffused-Junction Silicon Rectifier, flanged-case, axial-lead-type |
RCA Solid State |
| 251 |
1N5400G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 252 |
1N5401G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 253 |
1N5402G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 254 |
1N5404G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 255 |
1N5406G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 256 |
1N5407G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 257 |
1N5408G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 258 |
1N547 |
Diffused-Junction Silicon Rectifier, flanged-case, axial-lead-type |
RCA Solid State |
| 259 |
1N5926B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 260 |
1N5926B |
11 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 261 |
1N5926B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 262 |
1N5927B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 263 |
1N5927B |
12 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 264 |
1N5927B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 265 |
1N5928B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 266 |
1N5928B |
13 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 267 |
1N5928B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 268 |
1N5929B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 269 |
1N5929B |
15 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 270 |
1N5929B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
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