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Datasheets for ISTOR

Datasheets found :: 210818
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No. Part Name Description Manufacturer
241 13003BR TRIPLE DIFFUSED NPN TRANSISTOR(SWITCHING REGULATOR, HIGH VOLTAGE AND HIGH SPEED SWITCHING) Korea Electronics (KEC)
242 13003BR POWER TRANSISTORS(1.5A,300-400V,40W) MOSPEC Semiconductor
243 13003BR 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS Motorola
244 13003BR NPN SILICON TRANSISTOR Wing Shing Computer Components
245 1314AB60 60 W, 25 V, 1350-1400 MHz common emitter transistor GHz Technology
246 132-Z MOS Field Effect Power Transistors Unknow
247 133-Z MOS Field Effect Power Transistors Unknow
248 1401 Bulk Metal Foil Technology, 3 Pin Transistor Outline Hermetic Resistor Network Vishay
249 1401 Bulk Metal Foil Technology, 3 Pin Transistor Outline Hermetic Resistor Network Vishay
250 1403 Bulk Metal Foil Technology, 4 Pin Transistor Outline Hermetic Resistor Network, Smallest Available Miniature Hermetically-Sealed Network Vishay
251 1403 Bulk Metal Foil Technology, 4 Pin Transistor Outline Hermetic Resistor Network, Smallest Available Miniature Hermetically-Sealed Network Vishay
252 1413 Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Ideal for Uncomplicated Networks Vishay
253 1413 Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Ideal for Uncomplicated Networks Vishay
254 1415-2 2 W, 20 V, 1430-1540 MHz common base transistor GHz Technology
255 1415-7 7 W, 20 V, 1430-1540 MHz common base transistor GHz Technology
256 1416-100 100 W, 50 V, 1400-1600 MHz common base transistor GHz Technology
257 1416GN-120E GaN Transistors Microsemi
258 1416GN-120EL GaN Transistors Microsemi
259 1416GN-120EP GaN Transistors Microsemi
260 1416GN-600V GaN Transistors Microsemi
261 1417 Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Alternative Layout to Model 1413 Vishay
262 1417 Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Alternative Layout to Model 1413 Vishay
263 1417-12A 12 W, 28 V, 1400-1700 MHz common base transistor GHz Technology
264 1417-6A 6 W, 28 V, 1400-1700 MHz common base transistor GHz Technology
265 1419 Bulk Metal Foil Technology, 10 Pin Transistor Outline Hermetic Resistor Network, Largest R Capacity of the Smaller TO Series Vishay
266 1419 Bulk Metal Foil Technology, 10 Pin Transistor Outline Hermetic Resistor Network, Largest R Capacity of the Smaller TO Series Vishay
267 1421 Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration Vishay
268 1421 Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration Vishay
269 1422 Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration Vishay
270 1422 Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration Vishay


Datasheets found :: 210818
Page: | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |



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