No. |
Part Name |
Description |
Manufacturer |
241 |
13003BR |
TRIPLE DIFFUSED NPN TRANSISTOR(SWITCHING REGULATOR, HIGH VOLTAGE AND HIGH SPEED SWITCHING) |
Korea Electronics (KEC) |
242 |
13003BR |
POWER TRANSISTORS(1.5A,300-400V,40W) |
MOSPEC Semiconductor |
243 |
13003BR |
1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS |
Motorola |
244 |
13003BR |
NPN SILICON TRANSISTOR |
Wing Shing Computer Components |
245 |
1314AB60 |
60 W, 25 V, 1350-1400 MHz common emitter transistor |
GHz Technology |
246 |
132-Z |
MOS Field Effect Power Transistors |
Unknow |
247 |
133-Z |
MOS Field Effect Power Transistors |
Unknow |
248 |
1401 |
Bulk Metal Foil Technology, 3 Pin Transistor Outline Hermetic Resistor Network |
Vishay |
249 |
1401 |
Bulk Metal Foil Technology, 3 Pin Transistor Outline Hermetic Resistor Network |
Vishay |
250 |
1403 |
Bulk Metal Foil Technology, 4 Pin Transistor Outline Hermetic Resistor Network, Smallest Available Miniature Hermetically-Sealed Network |
Vishay |
251 |
1403 |
Bulk Metal Foil Technology, 4 Pin Transistor Outline Hermetic Resistor Network, Smallest Available Miniature Hermetically-Sealed Network |
Vishay |
252 |
1413 |
Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Ideal for Uncomplicated Networks |
Vishay |
253 |
1413 |
Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Ideal for Uncomplicated Networks |
Vishay |
254 |
1415-2 |
2 W, 20 V, 1430-1540 MHz common base transistor |
GHz Technology |
255 |
1415-7 |
7 W, 20 V, 1430-1540 MHz common base transistor |
GHz Technology |
256 |
1416-100 |
100 W, 50 V, 1400-1600 MHz common base transistor |
GHz Technology |
257 |
1416GN-120E |
GaN Transistors |
Microsemi |
258 |
1416GN-120EL |
GaN Transistors |
Microsemi |
259 |
1416GN-120EP |
GaN Transistors |
Microsemi |
260 |
1416GN-600V |
GaN Transistors |
Microsemi |
261 |
1417 |
Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Alternative Layout to Model 1413 |
Vishay |
262 |
1417 |
Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Alternative Layout to Model 1413 |
Vishay |
263 |
1417-12A |
12 W, 28 V, 1400-1700 MHz common base transistor |
GHz Technology |
264 |
1417-6A |
6 W, 28 V, 1400-1700 MHz common base transistor |
GHz Technology |
265 |
1419 |
Bulk Metal Foil Technology, 10 Pin Transistor Outline Hermetic Resistor Network, Largest R Capacity of the Smaller TO Series |
Vishay |
266 |
1419 |
Bulk Metal Foil Technology, 10 Pin Transistor Outline Hermetic Resistor Network, Largest R Capacity of the Smaller TO Series |
Vishay |
267 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
268 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
269 |
1422 |
Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
270 |
1422 |
Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
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