| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2SA1980S |
PNP Silicon Transistor (General small signal amplifier) |
AUK Corp |
| 242 |
2SA1980SF |
PNP Silicon Transistor (General small signal amplifier) |
AUK Corp |
| 243 |
2SA1980U |
PNP Silicon Transistor (General small signal amplifier) |
AUK Corp |
| 244 |
2SA1980UF |
PNP Silicon Transistor (General small signal amplifier) |
AUK Corp |
| 245 |
2SA2154CT |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 246 |
2SA2154MFV |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 247 |
2SA2195 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 248 |
2SA2214 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 249 |
2SA2215 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 250 |
2SA495 |
Silicon PNP epitaxial planar transistor for General Amplifier Applications fT=200MHz, complementary to 2SC372 |
TOSHIBA |
| 251 |
2SB459 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 252 |
2SB460 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 253 |
2SB66H |
Germanium Transistor PNP Alloyed Junction, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 254 |
2SB75 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 255 |
2SB759 |
Si PNP epitaxial planar. General amplifier. |
Panasonic |
| 256 |
2SB759A |
Si PNP epitaxial planar. General amplifier. |
Panasonic |
| 257 |
2SB75A |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 258 |
2SB75AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 259 |
2SB75H |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 260 |
2SB902 |
Si PNP epitaxial planar. General amplifier. |
Panasonic |
| 261 |
2SC1060 |
Silicon NPN Triple Diffused Transistor, intended for use in 10~20 HiFi OTL Amplifier |
Hitachi Semiconductor |
| 262 |
2SC1061 |
Silicon NPN Triple Diffused Transistor, intended for use in 10~20 HiFi OTL Amplifier |
Hitachi Semiconductor |
| 263 |
2SC1927 |
NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE |
NEC |
| 264 |
2SC2230 |
Transistor Silicon NPN Triple Diffused Type (PCT Process) HIGH VOLTAGE GENERAL AMPLIFIER AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONS |
TOSHIBA |
| 265 |
2SC2230A |
Transistor Silicon NPN Triple Diffused Type (PCT Process) HIGH VOLTAGE GENERAL AMPLIFIER AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONS |
TOSHIBA |
| 266 |
2SC2258A |
Si NPN triple diffused planar. High voltage general amplifier. |
Panasonic |
| 267 |
2SC2258B |
Si NPN triple diffused planar. High voltage general amplifier. |
Panasonic |
| 268 |
2SC281 |
Silicon NPN Epitaxial LTP Transistor Vcbo=30V, Pc=200mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output |
Hitachi Semiconductor |
| 269 |
2SC281H |
Silicon NPN Epitaxial LTP Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 270 |
2SC283 |
Silicon NPN Epitaxial LTP Transistor Vcbo=50V, Pc=350mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output |
Hitachi Semiconductor |
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