No. |
Part Name |
Description |
Manufacturer |
241 |
1T410 |
Variable Capacitance Diode |
SONY |
242 |
1T411 |
Variable Capacitance Diode |
SONY |
243 |
1T412 |
Variable Capacitance Diode |
SONY |
244 |
1T413 |
Variable Capacitance Diode |
SONY |
245 |
1T417 |
Variable Capacitance Diode |
SONY |
246 |
1W404 |
Variable Capacitance Diode |
TWPEC |
247 |
1W404-M020A-T8A |
Variable Capacitance Diode |
TWPEC |
248 |
200D,202D |
Wet Tantalum Capacitors, Wet Sintered Anode Components, Capacitor Assemblies, Type 202D Designed to Meet the Performance and Marking Requirements of Military Style CL55 in Accordance with MIL-DTL-3965 |
Vishay |
249 |
24C44 |
256-Bit Serial Nonvolatile CMOS Static RAM |
Catalyst Semiconductor |
250 |
27C080 |
8-Megabit 1M x 8 UV Erasable CMOS EPROM |
Atmel |
251 |
27C16 |
16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
252 |
27C16Q450 |
16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
253 |
27C16Q550 |
16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
254 |
27C16Q883 |
16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
255 |
27C256 |
262,144-Bit (32,768 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
256 |
27C256E250_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 250ns |
National Semiconductor |
257 |
27C256E300_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 300ns |
National Semiconductor |
258 |
27C256E350_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 350ns |
National Semiconductor |
259 |
27C256Q250_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 250ns |
National Semiconductor |
260 |
27C256Q300_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 300ns |
National Semiconductor |
261 |
27C256Q350_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 350ns |
National Semiconductor |
262 |
27C64 |
65,536-Bit (8,192 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
263 |
2B56 |
High Accuracy, Thermocouple Cold Junction Compensator |
Intronics |
264 |
2SC5227A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single CP |
ON Semiconductor |
265 |
2SC5289-T1 |
Mobile communications transmission power amplifier |
NEC |
266 |
3-BB106 |
Variable capacitance diode |
mble |
267 |
308 |
Variable Compression Mica Padders |
Arco Electronics |
268 |
30A02CH |
Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single CPH3 |
ON Semiconductor |
269 |
30C02CH |
Bipolar Transistor, 30V, 0.7A, Low VCE(sat) NPN Single CPH3 |
ON Semiconductor |
270 |
3110-12SA |
3100 SERIES LOW PROFILE CONNECTOR FOR PREVENTING EMI |
Hirose Electric |
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