| No. |
Part Name |
Description |
Manufacturer |
| 241 |
33NQ52 |
Detection and mixer point contact diode |
Tesla Elektronicke |
| 242 |
34NQ52 |
Detection and mixer point contact diode |
Tesla Elektronicke |
| 243 |
35NQ52 |
Detection and mixer point contact diode |
Tesla Elektronicke |
| 244 |
37NQ52 |
Detection and mixer point contact diode |
Tesla Elektronicke |
| 245 |
3SK126 |
N CHANNEL DUAL GATE MOS TYPE (TY TUNER/ VHF RF AMPLIFIER/ TV TUNER VHF MIXER APPLICATIONS) |
TOSHIBA |
| 246 |
3SK127 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER/ UHF MIXER APPLICATIONS) |
TOSHIBA |
| 247 |
3SK151 |
N CHANNEL DUAL GATE MOS TYPE (TV TYNER VHF MIXER/ VHF RF AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 248 |
3SK176A |
RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
NEC |
| 249 |
3SK189 |
UHF Amp,Mixer Applications |
SANYO |
| 250 |
3SK252-T1 |
VHF TV tuner RF amplification & mixer use N-channel MOS |
NEC |
| 251 |
3SK252-T2 |
VHF TV tuner RF amplification & mixer use N-channel MOS |
NEC |
| 252 |
3SK254-T1 |
VHF TV tuner RF amplification & mixer use N-channel MOS |
NEC |
| 253 |
3SK254-T2 |
VHF TV tuner RF amplification & mixer use N-channel MOS |
NEC |
| 254 |
3SK260 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER VHF MIXER/VHF RF AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 255 |
3SK30 |
Silicon N-Channel MOS FET, intended for use in FM/AM RF AMP. and Mixer |
Hitachi Semiconductor |
| 256 |
3SK30A |
Silicon N-Channel MOS FET, intended for use in FM/AM RF AMP. and Mixer |
Hitachi Semiconductor |
| 257 |
3SK74 |
Typical Application of 3SK74 to VHF tuner mixer |
NEC |
| 258 |
40468A |
MOS Field-Effect Transistor N-Channel Depletion Type, for RF Amplifier and Mixer Applications in FM and AM/FM receivers |
RCA Solid State |
| 259 |
40559A |
MOS Field-Effect Transistor N-Channel Depletion Type, for RF Amplifier and Mixer Applications in FM and AM/FM receivers |
RCA Solid State |
| 260 |
40821 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor for Mixer |
RCA Solid State |
| 261 |
40823 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor, for Mixers |
RCA Solid State |
| 262 |
50 OHMS 50 OHMS OHMIC ADDED 9-4-92 OHMIC |
33�43 GHz GaAs MMIC Image Rejection Balanced Mixer |
Alpha Industries Inc |
| 263 |
AAY34 |
Microwave mixer diode |
Mullard |
| 264 |
AAY39 |
Mixer diode |
mble |
| 265 |
AAY39 |
Microwave mixer diode |
Mullard |
| 266 |
AAY39A |
Mixer diode |
mble |
| 267 |
AAY39A |
Microwave mixer diode |
Mullard |
| 268 |
AAY50 |
Microwave mixer diode |
Mullard |
| 269 |
AAY50R |
Microwave mixer diode |
Mullard |
| 270 |
AAY51 |
Mixer diode |
mble |
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