| No. |
Part Name |
Description |
Manufacturer |
| 241 |
BMT1720B06 |
Silicon microwave power transistor. |
BOPOLARICS |
| 242 |
BMT1720B10 |
Silicon microwave power transistor. |
BOPOLARICS |
| 243 |
BMT1720B20 |
Silicon microwave power transistor. |
BOPOLARICS |
| 244 |
BMT1720B20 |
SILICON MICROWAVE POWER TRANSISTOR |
etc |
| 245 |
CDBMT1100-HF |
Halogen Free Schottky Barrier Diodes, VRRM=100V, VR=100V, IO=1A |
Comchip Technology |
| 246 |
CDBMT1150-HF |
Halogen Free Schottky Barrier Diodes, VRRM=150V, VR=150V, IO=1A |
Comchip Technology |
| 247 |
CDBMT1200-HF |
Halogen Free Schottky Barrier Diodes, VRRM=200V, VR=200V, IO=1A |
Comchip Technology |
| 248 |
CDBMT140-HF |
Halogen Free Schottky Barrier Diodes, VRRM=40V, VR=40V, IO=1A |
Comchip Technology |
| 249 |
CDBMT160-HF |
Halogen Free Schottky Barrier Diodes, VRRM=60V, VR=60V, IO=1A |
Comchip Technology |
| 250 |
CFRMT104-HF |
Halogen Free Fast Recovery Rectifiers, VRRM=400V, VR=400V, IO=1A |
Comchip Technology |
| 251 |
CFRMT105-HF |
Halogen Free Fast Recovery Rectifiers, VRRM=600V, VR=600V, IO=1A |
Comchip Technology |
| 252 |
CFRMT107-HF |
Halogen Free Fast Recovery Rectifiers, VRRM=1000V, VR=1000V, IO=1A |
Comchip Technology |
| 253 |
CMT14N50 |
POWER FIELD EFFECT TRANSISTOR |
Champion Microelectronic Corporation |
| 254 |
CMT14N50N3P |
POWER FIELD EFFECT TRANSISTOR |
Champion Microelectronic Corporation |
| 255 |
CSFMT104-HF |
Halogen Free Super Fast Recovery Rectifiers, VRRM=200V, VDC=200V, I(AV)=1A |
Comchip Technology |
| 256 |
CSFMT106-HF |
Halogen Free Super Fast Recovery Rectifiers, VRRM=400V, VDC=400V, I(AV)=1A |
Comchip Technology |
| 257 |
CSFMT108-HF |
Halogen Free Super Fast Recovery Rectifiers, VRRM=600V, VDC=600V, I(AV)=1A |
Comchip Technology |
| 258 |
CURMT103-HF |
Halogen Free Ultra Fast Recovery Rectifiers, VRRM=200V, VR=200V, IO=1A |
Comchip Technology |
| 259 |
CURMT104-HF |
Halogen Free Ultra Fast Recovery Rectifiers, VRRM=400V, VR=400V, IO=1A |
Comchip Technology |
| 260 |
CURMT107-HF |
Halogen Free Ultra Fast Recovery Rectifiers, VRRM=1000V, VR=1000V, IO=1A |
Comchip Technology |
| 261 |
EMT1 |
Transistors > Complex Bipolar Transistors |
ROHM |
| 262 |
EMT18 |
Transistors > Complex Bipolar Transistors |
ROHM |
| 263 |
EMT18T2R |
PNP+PNP Low VCE(sat) Transistor |
ROHM |
| 264 |
EMT1DXV6T1 |
Dual General Purpose Transistors |
ON Semiconductor |
| 265 |
EMT1FHA |
PNP+PNP General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 266 |
EMT1FHAT2L |
PNP+PNP General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 267 |
EMT1T2R |
PNP+PNP General Purpose Amplification Transistor |
ROHM |
| 268 |
FCMT199N60 |
N-Channel SuperFET� II MOSFET |
Fairchild Semiconductor |
| 269 |
FM3540CMT14 |
4/5 Bit Multiplexed/ 1 Bit Latched Port with Standard 2-Wire Bus Interface and Non-Volatile Latches |
Fairchild Semiconductor |
| 270 |
FM3540SMT14 |
4/5 Bit Multiplexed/ 1 Bit Latched Port with Standard 2-Wire Bus Interface and Non-Volatile Latches |
Fairchild Semiconductor |
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