| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2N5871/2 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 242 |
2N5872 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 243 |
2N5872A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 244 |
2N5872B |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 245 |
2N5873 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 246 |
2N5873/1 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 247 |
2N5873/2 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 248 |
2N5874 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 249 |
2N5874A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 250 |
2N5874B |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 251 |
2N5961 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 252 |
2N5961_D27Z |
NPN General Purpose Amplifer |
Fairchild Semiconductor |
| 253 |
2N5962 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 254 |
2N5962_D74Z |
NPN General Purpose Amplifer |
Fairchild Semiconductor |
| 255 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
| 256 |
2N6338A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 257 |
2N6339A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 258 |
2N6340A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 259 |
2N6341A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 260 |
2N6436A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 261 |
2N6437A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 262 |
2N6438A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 263 |
2N929 |
Silicon General Purpose Transistor |
ITT Semiconductors |
| 264 |
2N930 |
Silicon General Purpose Transistor |
ITT Semiconductors |
| 265 |
2N930CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 266 |
2PC1815 |
NPN general purpose transistor |
Philips |
| 267 |
2PC1815BL |
NPN general purpose transistor |
Philips |
| 268 |
2PC1815GR |
NPN general purpose transistor |
Philips |
| 269 |
2PC1815Y |
NPN general purpose transistor |
Philips |
| 270 |
2PC4081 |
NPN general purpose transistor |
Philips |
| | | |
